CY7C1021CV33-12VXET

Product Overview

Category: Integrated Circuit (IC)

Use: The CY7C1021CV33-12VXET is a high-speed, low-power CMOS static random access memory (SRAM) device. It is designed for use in various electronic systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Non-volatile storage - Wide operating voltage range - Small form factor

Package: The CY7C1021CV33-12VXET is available in a compact 44-pin Very Thin Quad Flat Pack (VQFP) package. This package offers excellent thermal performance and ease of integration into circuit boards.

Essence: The essence of the CY7C1021CV33-12VXET lies in its ability to provide high-speed and low-power data storage capabilities, making it suitable for a wide range of applications.

Packaging/Quantity: The CY7C1021CV33-12VXET is typically sold in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 128K x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years (minimum)

Pin Configuration

The CY7C1021CV33-12VXET has a total of 44 pins. Here is the detailed pin configuration:

(Pin diagram goes here)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures efficient use of energy.
• Non-volatile storage retains data even when power is disconnected.
• Wide operating voltage range provides flexibility in different electronic systems.
• Small form factor enables easy integration into compact designs.

Advantages and Disadvantages

Advantages: - High-speed operation improves overall system performance. - Low power consumption prolongs battery life in portable devices. - Non-volatile storage ensures data integrity during power interruptions. - Wide operating voltage range allows for compatibility with various systems. - Small form factor facilitates space-constrained designs.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Relatively higher cost per bit compared to some alternative memory options. - Susceptible to electromagnetic interference (EMI) due to its high-speed operation.

Working Principles

The CY7C1021CV33-12VXET operates based on the principles of static random access memory. It uses flip-flops to store each bit of data, which can be accessed and modified at high speeds. The memory cells are organized in a matrix structure, allowing simultaneous access to multiple bits of data.

Detailed Application Field Plans

The CY7C1021CV33-12VXET finds applications in various electronic systems that require fast and reliable data storage. Some potential application fields include: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• CY7C1021CV33-10ZSXE: Similar to CY7C1021CV33-12VXET but with a faster access time of 10 ns.
• CY7C1021CV33-15ZSXIT: Similar to CY7C1021CV33-12VXET but with a slower access time of 15 ns.
• CY7C1021CV33-20ZSXE: Similar to CY7C1021CV33-12VXET but with a slower access time of 20 ns.

These alternative models offer different access times to cater to specific application requirements.

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