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CY7C1245KV18-400BZXI

CY7C1245KV18-400BZXI

Product Overview

Category

The CY7C1245KV18-400BZXI belongs to the category of high-speed synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

  • High Speed: The CY7C1245KV18-400BZXI operates at a clock frequency of 400 MHz, allowing for rapid data access.
  • Large Capacity: With a capacity of 1 Megabit (128K x 8), this SRAM chip can store a significant amount of data.
  • Low Power Consumption: It is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Reliable Performance: The chip incorporates advanced error correction techniques to ensure data integrity.
  • Wide Temperature Range: It can operate reliably across a wide temperature range, making it suitable for various environments.

Package

The CY7C1245KV18-400BZXI is available in a compact BGA (Ball Grid Array) package. This package offers excellent thermal performance and facilitates easy integration into circuit boards.

Essence

The essence of the CY7C1245KV18-400BZXI lies in its ability to provide high-speed and reliable data storage in a compact form factor.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

  • Clock Frequency: 400 MHz
  • Capacity: 1 Megabit (128K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 2.5 ns
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: BGA

Detailed Pin Configuration

The CY7C1245KV18-400BZXI has a total of 48 pins. The pin configuration is as follows:

  1. VDDQ
  2. VSSQ
  3. NC
  4. DQ0
  5. DQ1
  6. DQ2
  7. DQ3
  8. DQ4
  9. DQ5
  10. DQ6
  11. DQ7
  12. VDDQ
  13. VSSQ
  14. NC
  15. A0
  16. A1
  17. A2
  18. A3
  19. A4
  20. A5
  21. A6
  22. A7
  23. A8
  24. A9
  25. A10
  26. A11
  27. A12
  28. A13
  29. A14
  30. A15
  31. A16
  32. A17
  33. A18
  34. A19
  35. A20
  36. A21
  37. A22
  38. A23
  39. A24
  40. A25
  41. A26
  42. A27
  43. A28
  44. A29
  45. A30
  46. A31
  47. VDDQ
  48. VSSQ

Functional Features

  • High-Speed Data Access: The CY7C1245KV18-400BZXI offers fast read and write operations, enabling efficient data processing.
  • Error Correction: It incorporates error correction techniques to ensure data integrity and reliability.
  • Low Power Consumption: The chip is designed to minimize power consumption, making it suitable for energy-efficient applications.
  • Easy Integration: The compact BGA package allows for easy integration into circuit boards, saving valuable space.

Advantages and Disadvantages

Advantages

  • High-speed operation enables rapid data access.
  • Large capacity provides ample storage for various applications.
  • Low power consumption makes it suitable for battery-powered devices.
  • Wide temperature range allows for reliable operation in different environments.
  • Error correction techniques ensure data integrity.

Disadvantages

  • The BGA package may require specialized equipment for soldering and rework.
  • Limited availability of alternative models from other manufacturers.

Working Principles

The CY7C1245KV18-400BZXI operates based on the principles of synchronous SRAM. It utilizes a clock signal to synchronize read and write operations. When a read command is issued, the chip retrieves the requested data from its internal memory array and presents it on the output pins. Similarly, during a write operation, the incoming data is stored in the appropriate memory location. The error correction techniques employed by the chip help maintain data integrity and reliability.

Detailed Application Field Plans

The CY7C1245KV18-400BZXI finds application in

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av CY7C1245KV18-400BZXI i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of CY7C1245KV18-400BZXI in technical solutions:

  1. Q: What is the CY7C1245KV18-400BZXI? A: The CY7C1245KV18-400BZXI is a high-performance synchronous SRAM (Static Random Access Memory) with a capacity of 4 Megabits (512K x 8 bits).

  2. Q: What are the key features of CY7C1245KV18-400BZXI? A: Some key features include a fast access time of 4 ns, low power consumption, industrial temperature range (-40°C to +85°C), and a voltage supply range of 3.0V to 3.6V.

  3. Q: What are the typical applications of CY7C1245KV18-400BZXI? A: CY7C1245KV18-400BZXI is commonly used in networking equipment, telecommunications systems, industrial automation, medical devices, and other applications that require high-speed and reliable memory.

  4. Q: How does CY7C1245KV18-400BZXI ensure data integrity? A: It incorporates an advanced error detection and correction mechanism, such as parity checking and cyclic redundancy check (CRC), to ensure data integrity during read and write operations.

  5. Q: Can CY7C1245KV18-400BZXI operate at different clock frequencies? A: Yes, it supports various clock frequencies, including 200 MHz, 166 MHz, and 133 MHz, allowing flexibility in system design.

  6. Q: Does CY7C1245KV18-400BZXI have any power-saving features? A: Yes, it offers multiple power-saving modes, such as deep power-down and self-refresh modes, to minimize power consumption when the memory is not actively accessed.

  7. Q: Can CY7C1245KV18-400BZXI be used in battery-powered devices? A: Yes, its low power consumption and power-saving features make it suitable for battery-powered devices that require efficient memory usage.

  8. Q: What is the maximum operating temperature of CY7C1245KV18-400BZXI? A: The CY7C1245KV18-400BZXI can operate reliably within an industrial temperature range of -40°C to +85°C.

  9. Q: Does CY7C1245KV18-400BZXI support burst mode operations? A: Yes, it supports burst read and write operations, allowing for efficient data transfer between the memory and the processor.

  10. Q: Are there any recommended design guidelines for using CY7C1245KV18-400BZXI? A: Yes, Cypress Semiconductor provides a datasheet and application notes that offer detailed guidelines on layout considerations, signal integrity, and timing requirements for optimal performance.

Please note that these answers are general and may vary depending on specific design requirements and application scenarios.