S25FL164K0XMFI003

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Compact package size
• Package: 16-pin SOIC (Small Outline Integrated Circuit)
• Essence: Reliable and efficient flash memory solution
• Packaging/Quantity: Available in reels, with 2500 units per reel

Specifications

• Memory Capacity: 16 Megabits (2 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: Up to 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Ground (GND)
9. Not Connected (NC)
10. Not Connected (NC)
11. Not Connected (NC)
12. Not Connected (NC)
13. Supply Voltage (VCC)
14. Supply Voltage (VCC)
15. Not Connected (NC)
16. Not Connected (NC)

Functional Features

• High-speed data transfer rate up to 104 MHz
• Flexible erase and program operations
• Sector-based architecture for efficient data management
• Hardware and software protection mechanisms
• Deep power-down mode for ultra-low power consumption
• Status register for monitoring device status

Advantages

• Fast read and write operations enhance overall system performance
• Compact package size allows for space-saving designs
• Low power consumption extends battery life in portable devices
• High endurance ensures reliable data storage and retrieval
• Flexible erase and program operations enable efficient data management

Disadvantages

• Limited storage capacity compared to larger flash memory options
• Relatively higher cost per megabyte compared to other memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The S25FL164K0XMFI003 is based on the Serial Peripheral Interface (SPI) protocol. It utilizes a floating gate transistor structure to store data. When writing, an electric charge is applied to the floating gate, altering its electrical characteristics. This change allows the device to retain the written data even when power is removed. During read operations, the stored charge is measured, allowing the retrieval of the stored information.

Detailed Application Field Plans

• Embedded systems
• Consumer electronics
• Automotive applications
• Industrial control systems
• Networking equipment
• Medical devices

Detailed and Complete Alternative Models

1. S25FL032P0XMFI001 - 32 Megabits (4 Megabytes)
2. S25FL064L0XMFI010 - 64 Megabits (8 Megabytes)
3. S25FL128S0XMFI011 - 128 Megabits (16 Megabytes)
4. S25FL256S0XMFI012 - 256 Megabits (32 Megabytes)
5. S25FL512S0XMFI013 - 512 Megabits (64 Megabytes)

Note: The above alternative models are just a few examples. There are several other models available with varying capacities.

This entry provides comprehensive information about the S25FL164K0XMFI003 flash memory. Its basic overview, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models are covered.