Cypress Semiconductor Corp
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S29GL064N11FFIS10
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S29GL064N11FFIS10

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics: High capacity, non-volatile, fast read/write speeds
  • Package: Integrated Circuit (IC)
  • Essence: Non-volatile memory for long-term data storage
  • Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

  • Model: S29GL064N11FFIS10
  • Memory Type: NOR Flash
  • Capacity: 64 Megabits (8 Megabytes)
  • Organization: 8-bit wide data bus, 16-bit word size
  • Voltage Range: 2.7V - 3.6V
  • Access Time: 110 ns (typical)
  • Operating Temperature: -40°C to +85°C
  • Interface: Parallel
  • Package Type: 48-pin TSOP (Thin Small Outline Package)

Pin Configuration

The S29GL064N11FFIS10 has a total of 48 pins. The pin configuration is as follows:

  1. VCC (Power Supply)
  2. A0-A18 (Address Inputs)
  3. DQ0-DQ7 (Data Inputs/Outputs)
  4. WE# (Write Enable)
  5. CE# (Chip Enable)
  6. OE# (Output Enable)
  7. RP#/BYTE# (Reset/Byte#)
  8. RY/BY# (Ready/Busy#)
  9. WP#/ACC (Write Protect/Acceleration)
  10. VSS (Ground)

(Note: The remaining pins are not listed here for brevity.)

Functional Features

  • High-speed read and write operations
  • Sector erase and chip erase capabilities
  • Built-in hardware and software protection mechanisms
  • Low power consumption during standby mode
  • Reliable data retention for extended periods

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Wide operating temperature range - Robust protection mechanisms - Low power consumption

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance (number of erase/write cycles)

Working Principles

The S29GL064N11FFIS10 utilizes NOR flash memory technology. It stores data in a non-volatile manner, meaning the data remains intact even when power is removed. The memory cells are organized into sectors, which can be individually erased or written. The device operates by sending specific commands and addresses to access and manipulate the stored data.

Application Field Plans

The S29GL064N11FFIS10 is commonly used in various electronic devices that require reliable and high-capacity data storage. Some application fields include:

  1. Embedded systems
  2. Automotive electronics
  3. Industrial control systems
  4. Networking equipment
  5. Consumer electronics

Alternative Models

Here are some alternative models that offer similar functionality:

  1. S29GL032N90TFI040 - 32 Megabit NOR Flash Memory
  2. S29GL128P90TFCR20 - 128 Megabit NOR Flash Memory
  3. S29GL256P11TFIV10 - 256 Megabit NOR Flash Memory

(Note: These are just a few examples; there are many other alternative models available.)

This concludes the encyclopedia entry for the S29GL064N11FFIS10 flash memory.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av S29GL064N11FFIS10 i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of S29GL064N11FFIS10 in technical solutions:

  1. Q: What is the S29GL064N11FFIS10? A: The S29GL064N11FFIS10 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 64 megabits (8 megabytes) and operates at a voltage of 3.0 to 3.6 volts.

  2. Q: What are the typical applications of S29GL064N11FFIS10? A: The S29GL064N11FFIS10 is commonly used in various embedded systems, such as industrial automation, automotive electronics, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL064N11FFIS10? A: The S29GL064N11FFIS10 uses a parallel interface with an 8-bit or 16-bit data bus, making it compatible with a wide range of microcontrollers and processors.

  4. Q: What is the operating temperature range of S29GL064N11FFIS10? A: The S29GL064N11FFIS10 can operate within a temperature range of -40°C to +85°C, making it suitable for both commercial and industrial environments.

  5. Q: Does S29GL064N11FFIS10 support hardware and software write protection? A: Yes, the S29GL064N11FFIS10 supports both hardware and software write protection mechanisms, allowing you to protect the stored data from accidental modifications.

  6. Q: What is the erase and program cycle endurance of S29GL064N11FFIS10? A: The S29GL064N11FFIS10 has a minimum endurance of 100,000 erase/program cycles, ensuring reliable and long-lasting data storage.

  7. Q: Can S29GL064N11FFIS10 operate at different clock frequencies? A: Yes, the S29GL064N11FFIS10 supports various clock frequencies, allowing you to adjust the performance based on your specific application requirements.

  8. Q: Does S29GL064N11FFIS10 have any built-in error correction mechanisms? A: Yes, the S29GL064N11FFIS10 incorporates a built-in hardware ECC (Error Correction Code) engine that helps detect and correct bit errors during read operations.

  9. Q: What is the power supply voltage range for S29GL064N11FFIS10? A: The S29GL064N11FFIS10 requires a power supply voltage between 3.0 and 3.6 volts for proper operation.

  10. Q: Is S29GL064N11FFIS10 compatible with other flash memory devices? A: Yes, the S29GL064N11FFIS10 is compatible with other flash memory devices that follow industry-standard protocols and pinouts, making it easy to integrate into existing systems.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.