Cypress Semiconductor Corp
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S29GL064N11FFIV23
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S29GL064N11FFIV23

Product Overview

  • Category: Flash Memory
  • Use: Data storage and retrieval in electronic devices
  • Characteristics:
    • High capacity
    • Fast read and write speeds
    • Non-volatile memory
  • Package: Integrated Circuit (IC)
  • Essence: Stores digital information in a compact and durable format
  • Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

  • Capacity: 64 gigabits (8 gigabytes)
  • Voltage: 2.7V - 3.6V
  • Interface: Parallel
  • Access Time: 90 ns
  • Operating Temperature Range: -40°C to +85°C
  • Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The S29GL064N11FFIV23 has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. WE#
  43. CE#
  44. RE#
  45. WP#
  46. BYTE#
  47. RY/BY#
  48. VSS

Functional Features

  • High-speed data transfer
  • Reliable and durable storage
  • Easy integration into electronic devices
  • Support for various read and write operations
  • Low power consumption

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read and write speeds - Non-volatile memory retains data even when power is lost - Compact size - Wide operating temperature range

Disadvantages: - Limited erase/program cycles - Higher cost compared to other types of memory

Working Principles

The S29GL064N11FFIV23 utilizes a parallel interface to communicate with the host device. It stores digital information in memory cells using a combination of floating gate transistors and charge trapping techniques. When data needs to be read or written, the appropriate address is provided, and the corresponding memory cell is accessed.

Detailed Application Field Plans

The S29GL064N11FFIV23 is commonly used in various electronic devices that require high-capacity and fast-access storage. Some application fields include:

  1. Solid-state drives (SSDs)
  2. Digital cameras
  3. Gaming consoles
  4. Networking equipment
  5. Industrial control systems

Detailed and Complete Alternative Models

  1. S29GL128N10TFI020 - 128 gigabit flash memory with a serial interface
  2. S29GL256P11TFI010 - 256 gigabit flash memory with a parallel interface
  3. S29GL512S10TFI010 - 512 gigabit flash memory with a serial interface
  4. S29GL01GP11TFI020 - 1 terabit flash memory with a parallel interface

These alternative models offer different capacities and interface options to suit specific application requirements.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av S29GL064N11FFIV23 i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of S29GL064N11FFIV23 in technical solutions:

  1. Q: What is the S29GL064N11FFIV23? A: The S29GL064N11FFIV23 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 64 megabits (8 megabytes) and operates at a voltage of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL064N11FFIV23? A: The S29GL064N11FFIV23 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL064N11FFIV23? A: The S29GL064N11FFIV23 uses a parallel NOR Flash interface with a 16-bit data bus and supports both asynchronous and synchronous read operations.

  4. Q: What is the maximum operating frequency of S29GL064N11FFIV23? A: The S29GL064N11FFIV23 can operate at a maximum frequency of 66 MHz, allowing for fast data transfer rates.

  5. Q: Does S29GL064N11FFIV23 support random access read and write operations? A: Yes, the S29GL064N11FFIV23 supports random access read and write operations, making it suitable for applications that require frequent data updates.

  6. Q: Can S29GL064N11FFIV23 be used for code execution? A: Yes, the S29GL064N11FFIV23 can be used for code execution as it supports execute-in-place (XIP) functionality, allowing the processor to directly execute code from the flash memory.

  7. Q: What is the erase and program endurance of S29GL064N11FFIV23? A: The S29GL064N11FFIV23 has a typical endurance of 100,000 erase/program cycles per sector, ensuring reliable and long-lasting operation.

  8. Q: Does S29GL064N11FFIV23 support hardware and software data protection features? A: Yes, the S29GL064N11FFIV23 supports various hardware and software data protection features, including block locking, password protection, and write protection.

  9. Q: Can S29GL064N11FFIV23 operate in harsh environments? A: Yes, the S29GL064N11FFIV23 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration, making it suitable for rugged applications.

  10. Q: Is S29GL064N11FFIV23 compatible with other flash memory devices? A: Yes, the S29GL064N11FFIV23 is compatible with other flash memory devices that use a similar parallel NOR Flash interface, allowing for easy integration into existing systems.

Please note that these answers are general and may vary depending on specific implementation details and requirements.