S29GL064S70BHI030

Product Overview

Category

The S29GL064S70BHI030 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The S29GL064S70BHI030 offers a storage capacity of 64 gigabytes (GB), allowing users to store a large amount of data.
• Fast data transfer rate: With its high-speed interface, this flash memory device enables quick data transfer between the device and the host system.
• Reliable performance: The S29GL064S70BHI030 ensures reliable performance with its advanced error correction techniques and wear-leveling algorithms.
• Low power consumption: This flash memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The S29GL064S70BHI030 comes in a compact form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The S29GL064S70BHI030 is typically packaged in a small surface-mount package. It is available in different quantities depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Operating voltage: 2.7V - 3.6V
• Data transfer rate: Up to 100 megabytes per second (MB/s)
• Operating temperature range: -40°C to +85°C
• Erase/Program cycles: 100,000 cycles

Detailed Pin Configuration

The S29GL064S70BHI030 has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. /CE: Chip enable
4. /OE: Output enable
5. /WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. RY/BY# : Ready/Busy output
9. WP#/ACC: Write protect or accelerated programming control
10. RESET#: Reset input

(Note: The pin configuration may vary depending on the manufacturer's specifications.)

Functional Features

• High-speed data transfer: The S29GL064S70BHI030 supports a high-speed serial interface, allowing for fast and efficient data transfer.
• Error correction: This flash memory device incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling: The S29GL064S70BHI030 utilizes wear-leveling algorithms to evenly distribute write operations across memory cells, extending the lifespan of the device.
• Security features: This flash memory device offers various security features such as password protection and data encryption to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles (100,000 cycles)
• Higher cost compared to lower-capacity flash memory devices

Working Principles

The S29GL064S70BHI030 is based on NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. When data is written, electrical charges are stored in the memory cells, representing binary values. To read the data, the stored charges are detected and converted back into digital information. Erasing data involves removing the charges from the memory cells, making them ready for new data storage.

Detailed Application Field Plans

The S29GL064S70BHI030 is widely used in various electronic devices that require high-capacity data storage. Some of the application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems

Detailed and Complete Alternative Models

• S29GL032S70BHI030: 32 GB flash memory device with similar specifications
• S29GL128S70BHI030: 128 GB flash memory device with similar specifications
• S29GL256S70BHI030: 256 GB flash memory device with similar specifications

(Note: The availability of alternative models may vary depending on the manufacturer.)

This concludes the encyclopedia entry for the S29GL064S70BHI030 flash memory device.