S29GL064S80DHIV10

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for storing data in electronic devices
• Packaging/Quantity: Available in various packaging options (e.g., surface mount) with quantity options (e.g., reels of 1000 units)

Specifications

• Model: S29GL064S80DHIV10
• Memory Capacity: 64 gigabits (8 gigabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 80 nanoseconds
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The S29GL064S80DHIV10 flash memory chip has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A21: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector-based erasure and programming
• Automatic program and erase algorithms
• Hardware and software protection mechanisms
• Low power consumption
• Error correction code (ECC) support
• Data integrity and reliability

Advantages

• Large storage capacity
• Fast data access speeds
• Non-volatile memory retains data even without power
• High endurance with 100,000 erase/program cycles
• Wide operating temperature range
• Reliable and durable for long-term use

Disadvantages

• Relatively higher cost compared to other memory options
• Limited compatibility with certain devices due to parallel interface
• Requires additional circuitry for interfacing with microcontrollers

Working Principles

The S29GL064S80DHIV10 flash memory operates based on the principles of floating-gate transistors. It uses a grid of these transistors to store binary data as electrical charges. The presence or absence of charge determines the stored value (0 or 1). The memory can be programmed by applying high voltages to specific cells, and erased by removing the charges from those cells.

Detailed Application Field Plans

The S29GL064S80DHIV10 flash memory chip finds applications in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems
7. Medical devices

Alternative Models

Other flash memory chips that can be considered as alternatives to the S29GL064S80DHIV10 include:

1. S29GL128S10TFI010: 128 gigabit (16 gigabyte) capacity, serial interface
2. S29GL256S20DHI020: 256 gigabit (32 gigabyte) capacity, parallel interface
3. S29GL512S40BFI040: 512 gigabit (64 gigabyte) capacity, BGA package

These alternative models offer different capacities, interfaces, and packaging options to suit specific requirements.

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