S29GL128P10FAI012

Product Overview

Category

S29GL128P10FAI012 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
• High speed: Provides fast read and write operations.
• Reliable: Ensures data integrity with advanced error correction techniques.
• Low power consumption: Optimized for energy efficiency.
• Compact package: Comes in a small form factor suitable for integration into compact devices.

Package and Quantity

The S29GL128P10FAI012 flash memory device is packaged in a surface mount package (SOP) with 48 pins. It is typically sold in reels containing a specific quantity, usually 250 or 500 units per reel.

Specifications

• Memory Type: NOR Flash
• Capacity: 128 Gb (16 GB)
• Organization: 8,388,608 words x 16 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 100 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: SOP
• Pin Count: 48

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A22: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect control/acceleration input
10. VSS: Ground

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Advanced programming algorithms for reliable data storage
• Built-in error correction codes (ECC) for enhanced data integrity
• Power-saving features to optimize energy consumption
• Hardware and software protection mechanisms to prevent unauthorized access

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rates
• Reliable data retention
• Low power consumption
• Compact form factor

Disadvantages

• Higher cost compared to other memory technologies
• Limited endurance (limited number of program/erase cycles)
• Susceptible to physical damage (e.g., electrostatic discharge)

Working Principles

The S29GL128P10FAI012 flash memory device utilizes NOR flash technology. It stores data in a grid of memory cells, where each cell represents a bit of information. These cells can be electrically programmed and erased, allowing data to be written and rewritten.

When reading data, the device applies voltage to the selected memory cells and measures the resulting electrical current. This current indicates the stored data value. During writing or erasing, specific voltage levels are applied to modify the charge stored in the memory cells.

Detailed Application Field Plans

The S29GL128P10FAI012 flash memory device finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems - Embedded systems

Its high capacity, fast performance, and reliability make it suitable for storing operating systems, firmware, application code, and user data in these devices.

Alternative Models

• S29GL064P10FAI010
• S29GL256P10FAI020
• S29GL512P10FAI030

(Note: The alternative models listed above are similar flash memory devices with varying capacities and specifications.)

In conclusion, the S29GL128P10FAI012 flash memory device is a high-capacity, high-performance storage solution used in various electronic devices. Its reliability, compact size, and advanced features make it an ideal choice for applications requiring fast and efficient data storage.