Cypress Semiconductor Corp
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S29GL128P10TAI013
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S29GL128P10TAI013

Product Overview

Category

S29GL128P10TAI013 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High capacity: Offers a storage capacity of 128 gigabytes (GB).
  • High speed: Provides fast read and write operations.
  • Reliable: Ensures data integrity with built-in error correction mechanisms.
  • Low power consumption: Optimized for energy efficiency.
  • Wide temperature range: Can operate in extreme temperature conditions.
  • Long lifespan: Designed for extended usage.

Package

The S29GL128P10TAI013 flash memory device comes in a compact package that is compatible with industry-standard surface mount technology (SMT). It is available in a small form factor, making it suitable for space-constrained applications.

Essence

The essence of S29GL128P10TAI013 lies in its ability to store and retrieve digital information reliably and efficiently. It offers a high-capacity solution for storing critical data in electronic devices.

Packaging/Quantity

The S29GL128P10TAI013 flash memory device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies, but it is commonly available in bulk quantities for industrial production.

Specifications

  • Storage Capacity: 128 GB
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Transfer Rate: Up to 100 megabytes per second (MB/s)
  • Erase/Program Cycles: Minimum 100,000 cycles

Detailed Pin Configuration

The S29GL128P10TAI013 flash memory device has a pin configuration as follows:

  1. VCC: Power supply voltage
  2. A0-A23: Address inputs
  3. DQ0-DQ15: Data input/output lines
  4. WE#: Write enable control
  5. CE#: Chip enable control
  6. OE#: Output enable control
  7. RP#/BYTE#: Reset/byte control
  8. RY/BY#: Ready/busy status
  9. WP#/ACC: Write protect/acceleration control
  10. VSS: Ground

Functional Features

  • High-speed read and write operations
  • Sector erase capability for efficient data management
  • Built-in error correction code (ECC) for data integrity
  • Automatic program and erase algorithms for simplified operation
  • Software and hardware protection features to prevent unauthorized access
  • Low power consumption in standby and active modes

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable data retention
  • Wide operating temperature range
  • Long lifespan

Disadvantages

  • Higher cost compared to lower-capacity flash memory devices
  • Limited compatibility with older devices that use different interfaces

Working Principles

The S29GL128P10TAI013 flash memory device utilizes a combination of floating-gate transistors and semiconductor technology to store digital information. It employs a parallel interface to communicate with the host device, enabling high-speed data transfer.

When data is written to the flash memory, an electrical charge is applied to the floating gate, altering its state and storing the information. To read the stored data, the charge level on the floating gate is measured, allowing the retrieval of the original information.

Detailed Application Field Plans

The S29GL128P10TAI013 flash memory device finds applications in various fields, including:

  1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
  2. Automotive: Integrated into infotainment systems, navigation devices, and advanced driver-assistance systems (ADAS) for storing critical information.
  3. Industrial Automation: Employed in industrial control systems, robotics, and data loggers to store operational data.
  4. Networking Equipment: Utilized in routers, switches, and network attached storage (NAS) devices for storing configuration settings and firmware.

Detailed and Complete Alternative Models

  1. S29GL064P10TFI010
  2. S29GL256P10TFI020
  3. S29GL512P10TFI030
  4. S29GL01GP10TFI040

These alternative models offer different storage capacities while maintaining similar characteristics and functionality to the S29GL128P10TAI013 flash memory device.

In conclusion, the S29GL128P10TAI013 flash memory device is a high-capacity, reliable, and fast storage solution suitable for various electronic devices. Its wide temperature range, long lifespan, and built-in

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av S29GL128P10TAI013 i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of S29GL128P10TAI013 in technical solutions:

  1. Q: What is the S29GL128P10TAI013? A: The S29GL128P10TAI013 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits (16 megabytes) and operates at a voltage of 3.0 to 3.6 volts.

  2. Q: What are the typical applications of S29GL128P10TAI013? A: The S29GL128P10TAI013 is commonly used in various technical solutions such as embedded systems, automotive electronics, industrial control systems, and consumer electronics.

  3. Q: What is the interface of S29GL128P10TAI013? A: The S29GL128P10TAI013 uses a parallel interface with a 16-bit data bus and supports both asynchronous and synchronous operations.

  4. Q: What is the maximum operating frequency of S29GL128P10TAI013? A: The S29GL128P10TAI013 can operate at a maximum frequency of 100 MHz, allowing for fast data transfer rates.

  5. Q: Does S29GL128P10TAI013 support hardware or software write protection? A: Yes, the S29GL128P10TAI013 supports both hardware and software write protection mechanisms to prevent accidental or unauthorized modifications to the stored data.

  6. Q: Can S29GL128P10TAI013 be used for code execution? A: Yes, the S29GL128P10TAI013 can be used for code execution as it supports random access read operations, making it suitable for storing program instructions.

  7. Q: What is the typical endurance of S29GL128P10TAI013? A: The S29GL128P10TAI013 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting operation.

  8. Q: Does S29GL128P10TAI013 have any built-in error correction mechanisms? A: Yes, the S29GL128P10TAI013 features built-in hardware data protection mechanisms such as ECC (Error Correction Code) to ensure data integrity.

  9. Q: Can S29GL128P10TAI013 operate in harsh environments? A: Yes, the S29GL128P10TAI013 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration, making it suitable for use in rugged environments.

  10. Q: Is S29GL128P10TAI013 compatible with other flash memory devices? A: Yes, the S29GL128P10TAI013 is compatible with other flash memory devices that adhere to industry-standard interfaces and protocols, allowing for easy integration into existing systems.

Please note that the answers provided here are general and may vary depending on specific application requirements and implementation details.