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S29GL128P10TFI013

S29GL128P10TFI013

Product Overview

Category

S29GL128P10TFI013 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • Non-volatile memory: Retains data even when power is turned off.
  • High storage capacity: Offers 128 gigabits (16 gigabytes) of storage space.
  • Fast read and write speeds: Enables quick access to stored data.
  • Reliable performance: Provides consistent and stable operation.
  • Low power consumption: Optimizes energy efficiency.
  • Wide temperature range: Can operate in extreme temperature conditions.
  • Shock and vibration resistance: Withstands physical stress.

Package

The S29GL128P10TFI013 flash memory device comes in a compact and durable package. It is typically enclosed in a small plastic casing that protects the internal components from external damage.

Essence

The essence of S29GL128P10TFI013 lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This flash memory device is usually packaged individually or in bulk quantities, depending on the requirements of the customer or manufacturer.

Specifications

  • Memory Type: NAND Flash
  • Storage Capacity: 128 gigabits (16 gigabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The S29GL128P10TFI013 flash memory device has a specific pin configuration that facilitates its integration into electronic circuits. The following table provides a detailed overview of the pin functions:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 48 | VCC | Power Supply (3.3V) | | 49 | GND | Ground | | 50 | WE# | Write Enable | | 51 | CE# | Chip Enable | | ... | ... | ... |

Functional Features

  • High-speed data transfer: The S29GL128P10TFI013 flash memory device offers fast read and write speeds, allowing for quick data access and storage.
  • Reliable data retention: It ensures the integrity of stored data even in harsh environmental conditions or power loss scenarios.
  • Error correction: Built-in error correction mechanisms enhance data reliability by detecting and correcting errors during read and write operations.
  • Block erase capability: The flash memory can be erased in blocks, enabling efficient management of stored data.
  • Versatile interface: The parallel interface allows for easy integration with various electronic systems.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer speeds
  • Low power consumption
  • Wide temperature range operation
  • Shock and vibration resistance

Disadvantages

  • Relatively higher cost compared to other types of memory
  • Limited endurance (number of erase/write cycles)

Working Principles

The S29GL128P10TFI013 flash memory device utilizes NAND flash technology. It stores data by trapping electrons in a floating gate, which retains the charge even when power is removed. To read data, the device applies voltage to the appropriate memory cells and measures the resulting current flow. Writing data involves applying a high voltage to the control gate, which allows electrons to tunnel into the floating gate or be removed from it.

Detailed Application Field Plans

The S29GL128P10TFI013 flash memory device finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics - Medical equipment

Detailed and Complete Alternative Models

  1. S29GL064P10TFI010: 64 gigabit (8 gigabyte) version of the same flash memory device.
  2. S29GL256P10TFI013: 256 gigabit (32 gigabyte) version with higher storage capacity.
  3. S29GL128P10FFI020: Similar flash memory device with a different package type (FBGA).

These alternative models offer similar functionality but may vary in terms of storage capacity, package type, or other specifications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av S29GL128P10TFI013 i tekniska lösningar

  1. What is the maximum operating frequency of S29GL128P10TFI013?
    - The maximum operating frequency of S29GL128P10TFI013 is 66 MHz.

  2. What is the voltage range for S29GL128P10TFI013?
    - The voltage range for S29GL128P10TFI013 is 2.7V to 3.6V.

  3. Can S29GL128P10TFI013 be used in automotive applications?
    - Yes, S29GL128P10TFI013 is suitable for automotive applications.

  4. What is the typical power consumption of S29GL128P10TFI013?
    - The typical power consumption of S29GL128P10TFI013 is low, making it suitable for power-sensitive applications.

  5. Does S29GL128P10TFI013 support industrial temperature ranges?
    - Yes, S29GL128P10TFI013 supports industrial temperature ranges from -40°C to 85°C.

  6. What is the interface type of S29GL128P10TFI013?
    - S29GL128P10TFI013 uses a parallel interface for data transfer.

  7. Can S29GL128P10TFI013 be used in high-reliability applications?
    - Yes, S29GL128P10TFI013 is designed for high-reliability applications.

  8. What is the maximum erase and program cycle endurance of S29GL128P10TFI013?
    - S29GL128P10TFI013 has a high endurance with a maximum erase and program cycle of 100,000 cycles.

  9. Is S29GL128P10TFI013 compatible with standard flash memory interfaces?
    - Yes, S29GL128P10TFI013 is compatible with standard flash memory interfaces, making it easy to integrate into existing designs.

  10. What are the available package options for S29GL128P10TFI013?
    - S29GL128P10TFI013 is available in various package options including TSOP, BGA, and SOP, providing flexibility for different design requirements.