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S29GL128P11FFIS33

S29GL128P11FFIS33

Product Overview

Category

S29GL128P11FFIS33 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
  • Fast read/write speeds: Enables quick access to stored data.
  • Reliable: Provides high endurance and data retention capabilities.
  • Low power consumption: Optimized for energy efficiency.

Package

The S29GL128P11FFIS33 flash memory device comes in a compact package that ensures easy integration into electronic circuit boards.

Essence

The essence of S29GL128P11FFIS33 lies in its ability to provide reliable and high-capacity data storage for a wide range of electronic devices.

Packaging/Quantity

This flash memory device is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

  • Storage Capacity: 128 gigabits (16 gigabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 20 years
  • Endurance: Up to 100,000 program/erase cycles
  • Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The S29GL128P11FFIS33 flash memory device has a pin configuration as follows:

  1. VCC: Power supply voltage
  2. A0-A22: Address inputs
  3. DQ0-DQ15: Data input/output lines
  4. WE#: Write enable
  5. CE#: Chip enable
  6. OE#: Output enable
  7. RP#/BYTE#: Reset/byte select
  8. RY/BY#: Ready/busy
  9. WP#/ACC: Write protect/acceleration
  10. VSS: Ground

Functional Features

  • High-speed data transfer: Enables fast read and write operations.
  • Block erase capability: Allows for efficient erasure of large memory blocks.
  • Error correction code (ECC): Enhances data integrity and reliability.
  • Software and hardware protection mechanisms: Protects against unauthorized access and data corruption.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read/write speeds
  • High endurance and data retention
  • Low power consumption
  • Reliable performance

Disadvantages

  • Relatively higher cost compared to other storage options
  • Limited compatibility with certain older devices

Working Principles

The S29GL128P11FFIS33 flash memory device utilizes a combination of floating-gate transistors and semiconductor technology to store and retrieve digital data. It employs a parallel interface to communicate with the host device, enabling efficient data transfer.

Detailed Application Field Plans

The S29GL128P11FFIS33 flash memory device finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

  1. S29GL064P11TFI010: 64 gigabit (8 gigabyte) flash memory device with similar characteristics and specifications.
  2. S29GL256P11TFI020: 256 gigabit (32 gigabyte) flash memory device with higher storage capacity.
  3. S29GL512P11TFI030: 512 gigabit (64 gigabyte) flash memory device with even higher storage capacity.

These alternative models offer different storage capacities to cater to varying application requirements.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av S29GL128P11FFIS33 i tekniska lösningar

Sure! Here are 10 common questions and answers related to the application of S29GL128P11FFIS33 in technical solutions:

  1. Q: What is the S29GL128P11FFIS33? A: The S29GL128P11FFIS33 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits (16 megabytes) and operates at a voltage range of 2.7V to 3.6V.

  2. Q: What are the typical applications of S29GL128P11FFIS33? A: The S29GL128P11FFIS33 is commonly used in various embedded systems, such as automotive electronics, industrial control systems, consumer electronics, and networking equipment.

  3. Q: What is the interface of S29GL128P11FFIS33? A: The S29GL128P11FFIS33 uses a parallel interface with a 16-bit data bus and supports both asynchronous and synchronous operations.

  4. Q: What is the maximum operating frequency of S29GL128P11FFIS33? A: The S29GL128P11FFIS33 can operate at a maximum frequency of 66 MHz, allowing for fast data transfer rates.

  5. Q: Does S29GL128P11FFIS33 support hardware or software write protection? A: Yes, the S29GL128P11FFIS33 supports both hardware and software write protection mechanisms to prevent accidental or unauthorized modifications to the stored data.

  6. Q: Can S29GL128P11FFIS33 be used for code execution? A: Yes, the S29GL128P11FFIS33 can be used for storing executable code, making it suitable for firmware storage in microcontrollers and other embedded systems.

  7. Q: What is the typical endurance of S29GL128P11FFIS33? A: The S29GL128P11FFIS33 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting data storage.

  8. Q: Does S29GL128P11FFIS33 support sector erase operations? A: Yes, the S29GL128P11FFIS33 supports sector erase operations, allowing for efficient erasure of specific memory regions without affecting other data.

  9. Q: Can S29GL128P11FFIS33 operate in harsh environments? A: Yes, the S29GL128P11FFIS33 is designed to withstand extended temperature ranges and is capable of operating reliably in harsh industrial or automotive environments.

  10. Q: Is S29GL128P11FFIS33 compatible with other flash memory devices? A: Yes, the S29GL128P11FFIS33 is compatible with other flash memory devices that use a similar parallel interface, making it easy to integrate into existing systems.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.