S29GL128P11FFIS43

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory for storing data in electronic devices
• Packaging/Quantity: Available in various packaging options, typically sold in bulk quantities

Specifications

• Model: S29GL128P11FFIS43
• Memory Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Operating Voltage: 3.0 - 3.6 volts
• Access Time: 90 nanoseconds (typical)
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The S29GL128P11FFIS43 flash memory IC has a pin configuration as follows:

1. VCC: Power supply voltage
2. A0-A23: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in error correction codes (ECC) for data integrity
• Low power consumption during standby mode
• Support for multiple programming algorithms
• Hardware and software protection mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data access speeds - Reliable and durable - Low power consumption - Flexible programming options

Disadvantages: - Relatively high cost compared to other memory technologies - Limited endurance compared to some other non-volatile memory types

Working Principles

The S29GL128P11FFIS43 flash memory operates based on the principles of floating-gate transistors. It uses a grid of memory cells, where each cell stores data by trapping electric charge in a floating gate. The presence or absence of charge determines the stored data value (0 or 1). Data can be written to the memory by applying higher voltages to specific cells, and it can be read by sensing the voltage levels on the cells.

Detailed Application Field Plans

The S29GL128P11FFIS43 flash memory is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Gaming consoles
6. Automotive electronics
7. Industrial control systems

Its high capacity, fast read/write speeds, and reliability make it suitable for applications that require large amounts of non-volatile storage.

Detailed and Complete Alternative Models

1. S29GL064P11TFI010: 64 gigabit parallel flash memory with similar specifications
2. S29GL256P10TFI020: 256 gigabit parallel flash memory with higher capacity
3. S29GL512P11TFI030: 512 gigabit parallel flash memory with even higher capacity

These alternative models offer different storage capacities to cater to varying application requirements.

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