S29GL128P11FFIV23

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Memory Type: NOR Flash
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 16 M x 8 bits
• Voltage Supply: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The S29GL128P11FFIV23 has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write Enable
5. CE#: Chip Enable
6. OE#: Output Enable
7. RP#/BYTE#: Reset/Byte#
8. RY/BY#: Ready/Busy#
9. WP#/ACC: Write Protect/Acceleration
10. A19-A21: Additional address inputs
11. A22-A24: Additional address inputs
12. A25-A26: Additional address inputs
13. A27-A28: Additional address inputs
14. A29-A30: Additional address inputs
15. A31: Additional address input
16. VSS: Ground

Functional Features

• High-speed read and write operations for efficient data access
• Erase and program suspend/resume functionality for flexible operation
• Burst mode support for faster data transfer
• Uniform sector architecture for easy management of data storage
• Reliable data retention for long-term storage requirements

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable quick access to stored information
• Erase and program suspend/resume features provide flexibility during data manipulation
• Uniform sector architecture simplifies data management tasks

Disadvantages

• Parallel interface may limit compatibility with certain devices
• Higher power consumption compared to some other memory technologies
• Limited endurance in terms of erase/write cycles

Working Principles

The S29GL128P11FFIV23 is based on NOR flash memory technology. It utilizes a grid of memory cells, each capable of storing one bit of information. These cells are organized into sectors and sub-sectors, allowing for efficient reading, writing, and erasing of data. The memory operates by applying appropriate voltages to the address and control pins, enabling the desired operations such as reading, writing, or erasing.

Detailed Application Field Plans

The S29GL128P11FFIV23 finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation units) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches)

Detailed and Complete Alternative Models

• S29GL064P11FFIV20: 64 Megabit (8 Megabyte) capacity, similar features and specifications
• S29GL256P11FFIV23: 256 Megabit (32 Megabyte) capacity, similar features and specifications
• S29GL512P11FFIV23: 512 Megabit (64 Megabyte) capacity, similar features and specifications

(Note: The above alternative models are provided for reference purposes and may not represent an exhaustive list of alternatives available in the market.)

This entry provides an overview of the S29GL128P11FFIV23 flash memory, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. With its high-speed operations, large storage capacity, and reliable data retention, this flash memory offers a dependable solution for data storage needs in various electronic devices.