S29GL128P90FFSS73

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Small form factor, surface mount package
• Essence: Reliable and durable flash memory solution
• Packaging/Quantity: Available in reels or trays, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 Megabits (16 Megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Interface: Parallel
• Temperature Range: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years

Detailed Pin Configuration

The S29GL128P90FFSS73 has a total of 48 pins. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte enable control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed data transfer with fast access time
• Reliable and durable flash memory technology
• Low power consumption for efficient operation
• Wide temperature range for versatile usage scenarios
• Easy integration into various electronic devices
• Built-in write protection mechanism for data security

Advantages and Disadvantages

Advantages: - High storage capacity for extensive data needs - Fast read/write speeds for quick data access - Non-volatile memory ensures data retention even during power loss - Compact package size allows for space-saving designs - Wide temperature range enables usage in various environments

Disadvantages: - Limited endurance with a maximum of 100,000 program/erase cycles - Higher cost compared to other memory technologies - Requires additional circuitry for interfacing with the host device

Working Principles

The S29GL128P90FFSS73 utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The parallel interface allows for efficient data transfer between the memory and the host device.

Detailed Application Field Plans

The S29GL128P90FFSS73 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation devices
3. Industrial Control Systems: Programmable logic controllers, data loggers
4. Networking Equipment: Routers, switches, network attached storage (NAS)
5. Medical Devices: Patient monitoring systems, diagnostic equipment

Detailed and Complete Alternative Models

1. S29GL064P90FFIR20: 64 Megabit parallel flash memory with 90 nanoseconds access time
2. S29GL256P90FFIR10: 256 Megabit parallel flash memory with 90 nanoseconds access time
3. S29GL512P90FFIR12: 512 Megabit parallel flash memory with 90 nanoseconds access time
4. S29GL01GP90FFIR14: 1 Gigabit parallel flash memory with 90 nanoseconds access time

These alternative models offer different memory capacities while maintaining the same access time and parallel interface as the S29GL128P90FFSS73.

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