S29GL128P90TFIR23

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast read/write speeds
  • Reliable data retention
• Package: TFIR23 (Thin Fine-pitch Ball Grid Array)
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Individually packaged, quantity varies based on manufacturer

Specifications

• Capacity: 128 gigabits (16 gigabytes)
• Voltage: 2.7V - 3.6V
• Interface: Parallel NOR Flash
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The S29GL128P90TFIR23 has a total of 64 pins arranged as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. DQ8
43. DQ9
44. DQ10
45. DQ11
46. DQ12
47. DQ13
48. DQ14
49. DQ15
50. WE#
51. CE#
52. RE#
53. WP#
54. BYTE#
55. RY/BY#
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS
61. VSS
62. VSS
63. VSS
64. VCC

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Advanced locking mechanisms to protect critical data
• Low power consumption for extended battery life
• Error correction algorithms for enhanced reliability
• Support for various operating systems and interfaces

Advantages

• Large storage capacity allows for extensive data storage
• Fast read/write speeds enable quick access to stored information
• Reliable data retention ensures long-term integrity of stored data
• Versatile interface compatibility facilitates integration into different devices
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory
• Higher cost compared to other types of memory
• Susceptible to physical damage if mishandled or exposed to extreme conditions

Working Principles

The S29GL128P90TFIR23 utilizes a parallel NOR Flash architecture. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the memory controller applies appropriate voltages to the address pins, selects the desired memory cell, and reads the stored charge level to determine the data value.

Detailed Application Field Plans

The S29GL128P90TFIR23 is widely used in various electronic devices, including:

1. Solid-state drives (SSDs)
2. Embedded systems
3. Automotive electronics
4. Industrial control systems
5. Networking equipment
6. Consumer electronics

Detailed and Complete Alternative Models

1. S29GL064P90TFIR20 - 64 gigabit capacity, similar specifications
2. S29GL256P90TFIR25 - 256 gigabit capacity, higher storage capacity
3. S29GL512P90TFIR30 - 512 gigabit capacity, highest storage capacity

These alternative models offer different storage capacities to suit specific application requirements.

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