S29GL128S10TFI020

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High capacity (128 gigabits)
  • Fast read and write speeds
  • Low power consumption
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Provides reliable and high-performance data storage solution for various electronic devices
• Packaging/Quantity: Available in reels, with a quantity of 250 units per reel

Specifications

• Memory Type: NOR Flash
• Capacity: 128 gigabits
• Organization: 16,777,216 words x 8 bits
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Sector Architecture: Uniform 64 KByte sectors with 4 KByte sub-sectors
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The S29GL128S10TFI020 has a total of 56 pins. The pin configuration is as follows:

1. VCCQ
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. RE#
43. WE#
44. CE#
45. BYTE#
46. RY/BY#
47. VSSQ
48. VCC
49. VSS
50. RP#
51. WP#
52. RESET#
53. NC
54. NC
55. NC
56. NC

Functional Features

• High-speed read and write operations
• Efficient erase and program operations
• Suspend and resume operations for erase and program cycles
• Burst mode for faster data transfer
• Uniform sector architecture for easy management of data storage
• Reliable data retention for long periods

Advantages and Disadvantages

Advantages: - High capacity allows for ample data storage - Fast read and write speeds enhance overall device performance - Low power consumption helps conserve battery life - Suspend and resume operations provide flexibility in programming and erasing

Disadvantages: - Limited to parallel interface, may not be compatible with devices using other interfaces - Higher cost compared to lower capacity flash memory options

Working Principles

The S29GL128S10TFI020 operates based on the principles of NOR flash memory. It uses a grid of memory cells that can store binary data as electrical charges. The memory cells are organized into sectors and sub-sectors, allowing for efficient reading, writing, erasing, and programming operations. When data is written or erased, the electrical charges in the memory cells are manipulated to represent the desired information.

Detailed Application Field Plans

The S29GL128S10TFI020 is widely used in various electronic devices that require reliable and high-capacity data storage. Some of the application fields where this flash memory can be found include:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Gaming consoles
5. Automotive electronics
6. Industrial control systems
7. Medical devices

Detailed and Complete Alternative Models

1. S29GL064S10TFI010: 64 gigabit capacity, similar specifications and features as S29GL128S10TFI020.
2. S29GL256S10TFI020: 256 gigabit capacity, higher capacity option with similar characteristics.
3. S29GL512S10TFI020: 512 gigabit capacity, highest capacity option with similar features.

These alternative models provide different capacity options while maintaining similar functionality and characteristics to the S29GL128S10TFI020.

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