S29GL128S10TFIV10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Capacity: 128 Megabits (16 Megabytes)
• Organization: 16 M x 8 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The S29GL128S10TFIV10 has a total of 56 pins, which are assigned as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ7 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Reset/Byte#)
8. RY/BY# (Ready/Busy#)
9. WP#/ACC (Write Protect/Acceleration)
10. VSS (Ground)

Note: The pin configuration may vary depending on the package type.

Functional Features

• High-Speed Read and Write Operations: The S29GL128S10TFIV10 offers fast access times, allowing for quick retrieval and storage of data.
• Reliable Data Retention: This flash memory device ensures data integrity even during power loss or system failures.
• Block Erase Capability: It supports block erase operations, enabling efficient management of data storage.
• Low Power Consumption: The device is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages: - Large storage capacity - High-speed read and write operations - Reliable data retention - Low power consumption

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Higher cost compared to other types of memory

Working Principles

The S29GL128S10TFIV10 utilizes NOR flash memory technology. It stores data in a grid of memory cells, with each cell capable of holding one or more bits of information. The memory cells are organized into blocks, which can be individually erased or written. When data is written, the memory cells are programmed by applying electrical charges to specific locations within the cells. Reading data involves detecting the presence or absence of charges in the memory cells.

Detailed Application Field Plans

The S29GL128S10TFIV10 is widely used in various electronic devices that require reliable and high-capacity data storage. Some common application fields include: - Embedded Systems - Automotive Electronics - Industrial Control Systems - Consumer Electronics - Networking Equipment

Detailed and Complete Alternative Models

1. S29GL064S10TFI010 - 64 Megabit NOR Flash Memory
2. S29GL256S10TFI010 - 256 Megabit NOR Flash Memory
3. S29GL512S10TFI010 - 512 Megabit NOR Flash Memory
4. S29GL01GS10TFI010 - 1 Gigabit NOR Flash Memory
5. S29GL02GS10TFI010 - 2 Gigabit NOR Flash Memory

These alternative models offer different storage capacities to suit varying application requirements.

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