S29GL256S11DHV020

Product Overview

Category

The S29GL256S11DHV020 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The S29GL256S11DHV020 retains data even when power is turned off.
• High capacity: It has a storage capacity of 256 gigabits (32 gigabytes).
• High-speed data transfer: The device supports fast read and write operations.
• Reliable: It offers high endurance and data retention capabilities.
• Low power consumption: The S29GL256S11DHV020 is designed to consume minimal power during operation.

Package

The S29GL256S11DHV020 comes in a compact surface-mount package, which ensures easy integration into electronic devices.

Essence

The essence of the S29GL256S11DHV020 lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

This flash memory device is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 256 gigabits (32 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 120 megabytes per second (MB/s)
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The S29GL256S11DHV020 has a pin configuration as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/BYTE#: Reset/byte select
8. RY/BY#: Ready/busy

Functional Features

• Fast Read Access Time: The S29GL256S11DHV020 offers quick access to stored data, enabling efficient data retrieval.
• High-Speed Programming: It supports fast programming of data, reducing the time required for writing information onto the memory.
• Sector Erase Capability: The device allows for erasing data in sectors, providing flexibility in managing stored information.
• Automatic Program and Erase Algorithms: The S29GL256S11DHV020 incorporates built-in algorithms that simplify the programming and erasing processes.
• Error Correction Code (ECC): It includes ECC functionality to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• Large storage capacity
• High-speed data transfer
• Low power consumption
• Reliable and durable
• Compact form factor

Disadvantages

• Relatively high cost compared to lower-capacity flash memory devices
• Limited compatibility with certain older systems due to its parallel interface

Working Principles

The S29GL256S11DHV020 utilizes a combination of floating-gate transistors and semiconductor technology to store and retrieve digital data. When data is written, electrical charges are trapped within the floating gates, representing the stored information. During read operations, the charges are sensed and converted back into digital signals.

Detailed Application Field Plans

The S29GL256S11DHV020 finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. S29GL128S11DHV020: A similar flash memory device with a storage capacity of 128 gigabits.
2. S29GL512S11DHV020: A higher-capacity alternative with a storage capacity of 512 gigabits.
3. S29GL256S10DHIV010: A variant with different characteristics, including a lower operating voltage range.

Please note that the availability and specifications of alternative models may vary depending on the manufacturer.

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