S34MS01G200TFB000

Product Overview

Category

S34MS01G200TFB000 belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Reliable data retention
• Compact package size

Package

S34MS01G200TFB000 is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of S34MS01G200TFB000 lies in its ability to store and retrieve large amounts of data quickly and reliably.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of S34MS01G200TFB000 units.

Specifications

• Storage Capacity: 1 gigabit (128 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabits per second (Mbps)
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The pin configuration of S34MS01G200TFB000 is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing operations
4. WP: Write protect
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• Sector-based erasure and programming
• Automatic program and erase suspend/resume
• Software and hardware write protection
• Fast data transfer rate
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• High storage capacity allows for storing large amounts of data
• Fast read and write speeds enable quick data access
• Low power consumption helps conserve battery life in portable devices
• Reliable data retention ensures data integrity over time
• Compact package size facilitates integration into various electronic devices

Disadvantages

• Limited erase/program cycles may affect the lifespan of the device
• Higher cost compared to lower-capacity memory options

Working Principles

S34MS01G200TFB000 utilizes flash memory technology, which is based on the principle of trapping electric charges within a floating gate. These trapped charges represent binary data (0s and 1s) and can be electrically programmed or erased.

During programming, an electrical charge is applied to the floating gate, altering its threshold voltage and storing data. Erasing involves removing the trapped charges from the floating gate, resetting the memory cell to its initial state.

Data retrieval is achieved by applying appropriate voltages to the memory cells and sensing the resulting current flow, allowing the stored data to be read.

Detailed Application Field Plans

S34MS01G200TFB000 finds applications in various fields, including:

1. Personal Computers: Used for system booting, storing operating systems, and data storage.
2. Smartphones and Tablets: Provides storage for apps, multimedia content, and user data.
3. Digital Cameras: Stores high-resolution images and videos.
4. Automotive Electronics: Used for firmware storage, navigation systems, and entertainment systems.
5. Industrial Control Systems: Enables data logging, configuration storage, and firmware updates.

Detailed and Complete Alternative Models

1. S34MS02G200TFB000: Similar to S34MS01G200TFB000 but with double the storage capacity (2 gigabits).
2. S34MS04G200TFB000: Offers four times the storage capacity of S34MS01G200TFB000 (4 gigabits).
3. S34MS08G200TFB000: Provides eight times the storage capacity of S34MS01G200TFB000 (8 gigabits).

These alternative models offer increased storage capacity while maintaining similar characteristics and functionality.

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