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BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1

Product Overview

Category

The BSC042NE7NS3GATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-voltage applications in various electronic circuits and systems.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The BSC042NE7NS3GATMA1 is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 75V
  • Continuous Drain Current (ID): 80A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.2mΩ

Detailed Pin Configuration

The BSC042NE7NS3GATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in diverse applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power loss and heat generation.

Advantages

  • Suitable for high-power applications
  • Efficient power management
  • Fast switching speed

Disadvantages

  • May require additional circuitry for optimal performance in certain applications
  • Sensitivity to static electricity

Working Principles

The BSC042NE7NS3GATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The BSC042NE7NS3GATMA1 is widely used in: - Switching power supplies - Motor control systems - Inverters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the BSC042NE7NS3GATMA1 include: - IRF3205 - FDP8870 - STP80NF55-06

In conclusion, the BSC042NE7NS3GATMA1 power MOSFET offers high-voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of high-power electronic applications.

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