BSZ028N04LSATMA1

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, high speed switching
• Package: TO-220AB
• Essence: Efficient power management
• Packaging/Quantity: Tape & Reel, 800 units per reel

Specifications

• Voltage Rating: 40V
• Current Rating: 75A
• On-Resistance: 2.8mΩ
• Gate Charge: 35nC
• Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The BSZ028N04LSATMA1 follows the standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• High-speed switching for efficient power management
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Fast switching speed

Disadvantages: - Higher gate charge compared to some alternatives - Limited operating temperature range

Working Principles

The BSZ028N04LSATMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and high-speed switching capabilities to efficiently control power flow in various applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power switching applications, including but not limited to: - Motor control systems - Power supplies - Inverters - LED lighting

Detailed and Complete Alternative Models

• Alternative Model 1: XYZ042P06LSBTMA1

  • Voltage Rating: 60V
  • Current Rating: 100A
  • On-Resistance: 4.2mΩ

• Alternative Model 2: LMN035N03LSCTMA1

  • Voltage Rating: 30V
  • Current Rating: 50A
  • On-Resistance: 3.5mΩ

• Alternative Model 3: PQR045P05LSDTMA1

  • Voltage Rating: 50V
  • Current Rating: 80A
  • On-Resistance: 4.5mΩ

In conclusion, the BSZ028N04LSATMA1 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for power management in various applications.

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