IPB020N10N5LFATMA1

Product Overview

Category

The IPB020N10N5LFATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in applications requiring high power switching and efficient energy management.

Characteristics

• High current-carrying capability
• Low on-state resistance
• Fast switching speed
• Low gate charge

Package

The IPB020N10N5LFATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for controlling high-power circuits with minimal power loss.

Packaging/Quantity

It is usually packaged in reels containing a specific quantity, such as 1000 units per reel.

Specifications

• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 100A
• On-State Resistance (RDS(on)): 2.0mΩ
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 60nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB020N10N5LFATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• High current handling capacity
• Low conduction losses
• Fast switching characteristics
• Enhanced thermal performance

Advantages

• Efficient power management
• Reduced heat dissipation
• Improved system reliability
• Suitable for high-frequency applications

Disadvantages

• Higher cost compared to traditional power transistors
• Sensitivity to electrostatic discharge (ESD)

Working Principles

The IPB020N10N5LFATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Motor Control

The MOSFET can be utilized in motor control systems for variable speed drives and electric vehicle propulsion.

Power Supplies

It is suitable for use in high-efficiency power supply designs, including switch-mode and resonant converters.

Renewable Energy Systems

In solar inverters and wind turbine converters, the MOSFET aids in efficient power conversion and management.

Detailed and Complete Alternative Models

• IPB019N10N5LFATMA1
• IPB021N10N5LFATMA1
• IPB020N10N5LFATMB1

In conclusion, the IPB020N10N5LFATMA1 power MOSFET offers high-performance characteristics suitable for various power management applications, despite its higher cost and ESD sensitivity. Its efficient operation and compatibility with alternative models make it a valuable component in modern power electronics systems.

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