IPB100N04S4H2ATMA1
Product Overview
Category
The IPB100N04S4H2ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB100N04S4H2ATMA1 is typically available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with a quantity of 800 units per reel.
Specifications
- Drain-Source Voltage (VDS): 40V
- Continuous Drain Current (ID): 100A
- On-Resistance (RDS(on)): 4mΩ
- Power Dissipation (PD): 250W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB100N04S4H2ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages
- High voltage capability makes it suitable for diverse applications.
- Low on-resistance reduces power dissipation and heat generation.
- Fast switching speed enhances overall system performance.
Disadvantages
- May require careful handling due to its sensitivity to static electricity.
- Higher cost compared to standard MOSFETs with lower specifications.
Working Principles
The IPB100N04S4H2ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPB100N04S4H2ATMA1 is widely used in: - Switching power supplies - Motor control systems - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB100N04S4H2ATMA1 include: - IPB100N04S4-03 - IPB100N04S4L-03 - IPB100N04S4-03
In conclusion, the IPB100N04S4H2ATMA1 is a high-performance power MOSFET with versatile applications across various industries, offering high voltage capability, low on-resistance, and fast switching speed.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPB100N04S4H2ATMA1 i tekniska lösningar
What is the maximum drain current of IPB100N04S4H2ATMA1?
- The maximum drain current of IPB100N04S4H2ATMA1 is 100A.
What is the voltage rating of IPB100N04S4H2ATMA1?
- The voltage rating of IPB100N04S4H2ATMA1 is 40V.
Can IPB100N04S4H2ATMA1 be used in automotive applications?
- Yes, IPB100N04S4H2ATMA1 is suitable for automotive applications.
What is the typical on-resistance of IPB100N04S4H2ATMA1?
- The typical on-resistance of IPB100N04S4H2ATMA1 is 4mΩ.
Is IPB100N04S4H2ATMA1 suitable for high-frequency switching applications?
- Yes, IPB100N04S4H2ATMA1 is suitable for high-frequency switching due to its low gate charge and capacitance.
Does IPB100N04S4H2ATMA1 require a heat sink for operation?
- It is recommended to use a heat sink for prolonged or high-power operation to maintain optimal temperature.
What is the operating temperature range of IPB100N04S4H2ATMA1?
- The operating temperature range of IPB100N04S4H2ATMA1 is -55°C to 175°C.
Can IPB100N04S4H2ATMA1 be used in power supply designs?
- Yes, IPB100N04S4H2ATMA1 is commonly used in power supply designs due to its high current and voltage ratings.
What is the gate threshold voltage of IPB100N04S4H2ATMA1?
- The gate threshold voltage of IPB100N04S4H2ATMA1 is typically around 2.5V.
Is IPB100N04S4H2ATMA1 RoHS compliant?
- Yes, IPB100N04S4H2ATMA1 is RoHS compliant, making it suitable for environmentally conscious designs.