IPB65R660CFDATMA1

Product Overview

• Category: Power MOSFET
• Use: High-voltage applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: TO-263-7
• Essence: Advanced power semiconductor technology
• Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications

• Voltage Rating: 650V
• Current Rating: 60A
• On-Resistance: 66mΩ
• Gate Charge: 45nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB65R660CFDATMA1 features a TO-263-7 package with the following pin configuration: 1. Gate 2. Drain 3. Source 4. N/C 5. Source 6. Drain 7. Gate

Functional Features

• Low on-resistance for high efficiency
• Fast switching speed for improved performance
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages: - High efficiency - Reliable performance - Suitable for high-voltage applications

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to static electricity

Working Principles

The IPB65R660CFDATMA1 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control high voltages in various applications.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of high-voltage applications including: - Switched-mode power supplies - Motor control - Solar inverters - Electric vehicle charging systems

Detailed and Complete Alternative Models

1. IPB60R099CP - 600V, 23A, 99mΩ
2. IPW65R019C7 - 650V, 30A, 19mΩ
3. IPP60R190C7 - 600V, 24A, 190mΩ

Note: The alternative models listed above are for reference purposes and may not be direct replacements for all applications.

This completes the English editing encyclopedia entry structure for the IPB65R660CFDATMA1, covering its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.