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IPB80N04S303ATMA1
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IPB80N04S303ATMA1

Introduction

The IPB80N04S303ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO263-3
  • Essence: Efficient power management
  • Packaging/Quantity: Available in tape and reel packaging with varying quantities

Specifications

The IPB80N04S303ATMA1 features the following specifications: - Voltage Rating: 40V - Current Rating: 80A - On-Resistance: 8.5mΩ - Gate Charge: 60nC - Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The IPB80N04S303ATMA1 follows the standard pin configuration for a TO263-3 package, with the gate, drain, and source pins clearly labeled for easy integration into circuit designs.

Functional Features

  • High Voltage Capability: The device can handle high voltage levels, making it suitable for power applications.
  • Low On-Resistance: The low on-resistance minimizes power losses and improves efficiency.
  • Fast Switching Speed: Enables rapid switching transitions, enhancing overall performance.

Advantages and Disadvantages

Advantages

  • Efficient power management
  • High voltage capability
  • Low on-resistance

Disadvantages

  • Sensitive to static discharge
  • Limited maximum operating temperature

Working Principles

The IPB80N04S303ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate voltage is applied, the device allows current to flow between the drain and source terminals, enabling power switching functionality.

Detailed Application Field Plans

The IPB80N04S303ATMA1 finds extensive use in various application fields, including: - Power supplies - Motor control - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

  • IPB80N04S303ATMA2: Similar specifications with minor variations
  • IPB80N04S303ATMA3: Enhanced thermal performance variant
  • IPB80N04S303ATMA4: Higher current rating version

In conclusion, the IPB80N04S303ATMA1 is a versatile power MOSFET with excellent characteristics, making it an ideal choice for diverse power switching applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPB80N04S303ATMA1 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPB80N04S303ATMA1?

    • The maximum drain-source voltage of IPB80N04S303ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB80N04S303ATMA1?

    • The continuous drain current rating of IPB80N04S303ATMA1 is 80A.

  3. What is the on-resistance of IPB80N04S303ATMA1?

    • The on-resistance of IPB80N04S303ATMA1 is typically 4.5mΩ at Vgs=10V.

  4. What is the gate threshold voltage of IPB80N04S303ATMA1?

    • The gate threshold voltage of IPB80N04S303ATMA1 is typically 2V.

  5. What is the typical input capacitance of IPB80N04S303ATMA1?

    • The typical input capacitance of IPB80N04S303ATMA1 is 5200pF.

  6. What is the operating temperature range of IPB80N04S303ATMA1?

    • The operating temperature range of IPB80N04S303ATMA1 is -55°C to 175°C.

  7. Is IPB80N04S303ATMA1 suitable for automotive applications?

    • Yes, IPB80N04S303ATMA1 is designed for automotive applications.

  8. Does IPB80N04S303ATMA1 have built-in ESD protection?

    • Yes, IPB80N04S303ATMA1 features built-in ESD protection.

  9. What package type does IPB80N04S303ATMA1 come in?

    • IPB80N04S303ATMA1 is available in a TO-263-7 package.

  10. Can IPB80N04S303ATMA1 be used in high-power switching applications?

    • Yes, IPB80N04S303ATMA1 is suitable for high-power switching applications.