IPB80N06S2LH5ATMA4

Introduction

The IPB80N06S2LH5ATMA4 is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Component
• Use: Power MOSFET for electronic circuits
• Characteristics: High power handling capacity, low on-resistance, fast switching speed
• Package: TO-263-3 (D2PAK)
• Essence: Power management in electronic devices
• Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer

Specifications

• Voltage Rating: 60V
• Current Rating: 80A
• On-Resistance: 8mΩ
• Gate Charge: 45nC
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-263-3 (D2PAK)

Detailed Pin Configuration

The IPB80N06S2LH5ATMA4 typically has three pins: 1. Gate (G): Input pin for controlling the MOSFET 2. Drain (D): Output pin connected to the load 3. Source (S): Ground reference for the MOSFET

Functional Features

• High current-carrying capability
• Low on-resistance for efficient power transfer
• Fast switching speed for improved performance
• Enhanced thermal characteristics for heat dissipation

Advantages and Disadvantages

Advantages

• High power handling capacity
• Low on-resistance leading to reduced power losses
• Fast switching speed for improved efficiency

Disadvantages

• Higher gate charge compared to some alternative models
• Sensitive to static electricity and voltage spikes

Working Principles

The IPB80N06S2LH5ATMA4 operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals. By modulating this electric field, the MOSFET can efficiently regulate the power flow in electronic circuits.

Detailed Application Field Plans

The IPB80N06S2LH5ATMA4 finds extensive use in various applications including: - Switching power supplies - Motor control circuits - Inverters and converters - Automotive electronics - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to the IPB80N06S2LH5ATMA4 include: - IRF840: Similar voltage and current ratings - FDP8870: Lower on-resistance - STP80NF03L: Comparable specifications with different packaging

In conclusion, the IPB80N06S2LH5ATMA4 is a high-performance power MOSFET suitable for a wide range of electronic applications. Its robust characteristics and versatile nature make it a popular choice among design engineers and electronic enthusiasts.

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