IPD048N06L3GBTMA1

Introduction

The IPD048N06L3GBTMA1 is a power MOSFET belonging to the category of electronic components used for power management and control. This device offers high performance and reliability, making it suitable for a wide range of applications.

Basic Information Overview

• Category: Power MOSFET
• Use: Power management and control
• Characteristics: High performance, reliability
• Package: TO-252-3
• Essence: Efficient power switching
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Voltage Rating: 60V
• Current Rating: 75A
• RDS(ON): 4.8mΩ
• Gate Charge: 38nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD048N06L3GBTMA1 features a standard TO-252-3 package with three pins: 1. Pin 1 (Gate): Input for controlling the switching operation. 2. Pin 2 (Drain): Connects to the load and external circuitry. 3. Pin 3 (Source): Connected to the ground reference.

Functional Features

• Low RDS(ON) for minimal conduction losses
• Fast switching speed for efficient power control
• High current handling capability
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• High efficiency
• Reliable performance
• Wide operating temperature range
• Compact package size

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to electrostatic discharge (ESD)

Working Principles

The IPD048N06L3GBTMA1 operates based on the principle of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. By modulating the gate voltage, the device can efficiently switch high currents with minimal power dissipation.

Detailed Application Field Plans

The IPD048N06L3GBTMA1 finds extensive use in various applications, including: - Switching power supplies - Motor control - Battery management systems - LED lighting - Automotive electronics

Detailed and Complete Alternative Models

1. IPD048N06L3G: Similar specifications with a different package
2. IPD048N06L3GATMA1: Enhanced thermal performance variant
3. IPD048N06L3G: Lower cost alternative with slightly higher RDS(ON)

In conclusion, the IPD048N06L3GBTMA1 power MOSFET offers high-performance characteristics and reliability, making it a preferred choice for power management and control applications across various industries.

Word Count: 386