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IPD100N06S403ATMA2
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IPD100N06S403ATMA2

1. Introduction

The IPD100N06S403ATMA2 is a power MOSFET belonging to the category of semiconductor devices. It is commonly used in various electronic applications due to its unique characteristics and performance.

1.1 Basic Information Overview

  • Category: Power MOSFET
  • Use: Switching and amplification in electronic circuits
  • Characteristics: High current capability, low on-resistance, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management and control
  • Packaging/Quantity: Typically packaged in reels of 2500 units

2. Specifications

The IPD100N06S403ATMA2 features the following specifications: - Voltage Rating: 60V - Continuous Drain Current: 100A - On-Resistance: 6mΩ - Gate Threshold Voltage: 2V - Power Dissipation: 200W

3. Detailed Pin Configuration

The pin configuration of IPD100N06S403ATMA2 is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

4. Functional Features

  • High Current Capability: Enables handling of large currents in electronic circuits.
  • Low On-Resistance: Minimizes power loss and heat generation during operation.
  • Fast Switching Speed: Facilitates rapid switching between on and off states.

5. Advantages and Disadvantages

5.1 Advantages

  • High current handling capacity
  • Low on-resistance for efficient power management
  • Fast switching speed for improved performance

5.2 Disadvantages

  • Sensitivity to voltage spikes
  • Heat dissipation challenges at high currents

6. Working Principles

The IPD100N06S403ATMA2 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.

7. Detailed Application Field Plans

The IPD100N06S403ATMA2 finds extensive use in various applications, including: - Switching power supplies - Motor control - LED lighting - Audio amplifiers

8. Detailed and Complete Alternative Models

Some alternative models to IPD100N06S403ATMA2 include: - IRF540N - FDP8878 - STP80NF55-06

In conclusion, the IPD100N06S403ATMA2 power MOSFET offers high-performance characteristics suitable for diverse electronic applications, with several alternative models available in the market for comparison and specific application requirements.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD100N06S403ATMA2 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPD100N06S403ATMA2?

    • The maximum drain-source voltage of IPD100N06S403ATMA2 is 60V.

  2. What is the continuous drain current rating of IPD100N06S403ATMA2?

    • The continuous drain current rating of IPD100N06S403ATMA2 is 100A.

  3. What is the on-resistance of IPD100N06S403ATMA2?

    • The on-resistance of IPD100N06S403ATMA2 is typically 6.4mΩ at Vgs=10V.

  4. Can IPD100N06S403ATMA2 be used in automotive applications?

    • Yes, IPD100N06S403ATMA2 is suitable for automotive applications.

  5. What is the operating temperature range of IPD100N06S403ATMA2?

    • The operating temperature range of IPD100N06S403ATMA2 is -55°C to 175°C.

  6. Does IPD100N06S403ATMA2 have built-in protection features?

    • IPD100N06S403ATMA2 does not have built-in protection features and may require external circuitry for protection.

  7. Is IPD100N06S403ATMA2 RoHS compliant?

    • Yes, IPD100N06S403ATMA2 is RoHS compliant.

  8. What type of package does IPD100N06S403ATMA2 come in?

    • IPD100N06S403ATMA2 comes in a TO-252-3 package.

  9. What are some typical applications for IPD100N06S403ATMA2?

    • Typical applications for IPD100N06S403ATMA2 include motor control, power supplies, and DC-DC converters.

  10. What is the gate threshold voltage of IPD100N06S403ATMA2?

    • The gate threshold voltage of IPD100N06S403ATMA2 is typically 2V.