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IPD110N12N3GATMA1
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IPD110N12N3GATMA1

Product Overview

Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-252-3
Essence: Power efficiency and reliability
Packaging/Quantity: Tape and Reel, 2500 units

Specifications

  • Voltage Rating: 120V
  • Current Rating: 110A
  • RDS(ON): 3.3mΩ
  • Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD110N12N3GATMA1 has a standard TO-252-3 package with three pins: gate, drain, and source.

Functional Features

  • Low RDS(ON) for reduced conduction losses
  • Fast switching speed for improved efficiency
  • Low gate charge for reduced drive requirements
  • Enhanced avalanche energy capability for ruggedness

Advantages and Disadvantages

Advantages: - High power handling capability - Low on-state resistance - Fast switching speed

Disadvantages: - Higher gate capacitance compared to some alternative models - Sensitive to overvoltage conditions

Working Principles

The IPD110N12N3GATMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of high-power applications including: - Switched-mode power supplies - Motor control - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

  • IPD110N12N3G
  • IPD110N12N3GATM

This completes the entry for IPD110N12N3GATMA1, providing comprehensive information about its product details, specifications, features, and application areas.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD110N12N3GATMA1 i tekniska lösningar

  1. What is the maximum drain current of IPD110N12N3GATMA1?

    • The maximum drain current of IPD110N12N3GATMA1 is 110A.

  2. What is the voltage rating of IPD110N12N3GATMA1?

    • IPD110N12N3GATMA1 has a voltage rating of 1200V.

  3. What is the on-state resistance (RDS(on)) of IPD110N12N3GATMA1?

    • The on-state resistance of IPD110N12N3GATMA1 is typically 75mΩ.

  4. Can IPD110N12N3GATMA1 be used in high-power applications?

    • Yes, IPD110N12N3GATMA1 is suitable for high-power applications due to its high drain current and voltage rating.

  5. What type of package does IPD110N12N3GATMA1 come in?

    • IPD110N12N3GATMA1 comes in a TO-252-3 package.

  6. Is IPD110N12N3GATMA1 suitable for motor control applications?

    • Yes, IPD110N12N3GATMA1 is commonly used in motor control applications due to its high current handling capability.

  7. Does IPD110N12N3GATMA1 require a heat sink for operation?

    • It is recommended to use a heat sink with IPD110N12N3GATMA1, especially in high-power applications, to ensure optimal thermal performance.

  8. What is the gate threshold voltage of IPD110N12N3GATMA1?

    • The gate threshold voltage of IPD110N12N3GATMA1 is typically 4V.

  9. Can IPD110N12N3GATMA1 be used in switching power supply designs?

    • Yes, IPD110N12N3GATMA1 is suitable for switching power supply designs due to its high voltage rating and low on-state resistance.

  10. Are there any application notes or reference designs available for using IPD110N12N3GATMA1?

    • Yes, Infineon provides application notes and reference designs for utilizing IPD110N12N3GATMA1 in various technical solutions.