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IPD30N08S2L21ATMA1
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IPD30N08S2L21ATMA1

Product Overview

Category

The IPD30N08S2L21ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPD30N08S2L21ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 30A
  • On-Resistance (RDS(on)): 0.030 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD30N08S2L21ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in a wide range of applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitivity to static electricity
  • Gate drive requirements may be more critical compared to other MOSFETs

Working Principles

The IPD30N08S2L21ATMA1 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage to the gate terminal.

Detailed Application Field Plans

The IPD30N08S2L21ATMA1 is widely used in: - Power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPD30N08S2L21ATMA1 include: - IRF3205 - FDP8878 - STP55NF06L

In conclusion, the IPD30N08S2L21ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD30N08S2L21ATMA1 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPD30N08S2L21ATMA1?

    • The maximum drain-source voltage is 80V.

  2. What is the continuous drain current rating of IPD30N08S2L21ATMA1?

    • The continuous drain current rating is 30A.

  3. What is the on-resistance of IPD30N08S2L21ATMA1?

    • The on-resistance is typically 0.008 ohms.

  4. Can IPD30N08S2L21ATMA1 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPD30N08S2L21ATMA1?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPD30N08S2L21ATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  7. Is IPD30N08S2L21ATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching applications.

  8. What is the gate threshold voltage of IPD30N08S2L21ATMA1?

    • The gate threshold voltage is typically 2.5V.

  9. Does IPD30N08S2L21ATMA1 require a heat sink for proper operation?

    • It is recommended to use a heat sink for high-power applications.

  10. Is IPD30N08S2L21ATMA1 RoHS compliant?

    • Yes, it is RoHS compliant.