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IPD50N06S409ATMA2
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IPD50N06S409ATMA2

Product Overview

Category

The IPD50N06S409ATMA2 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as voltage regulation and switching circuits.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirements

Package

The IPD50N06S409ATMA2 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 50A
  • On-State Resistance (RDS(on)): 4.09mΩ
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD50N06S409ATMA2 features a standard pin configuration with three pins: gate (G), drain (D), and source (S).

Functional Features

  • High current handling capacity
  • Low conduction losses
  • Fast switching characteristics
  • Compatibility with low-voltage control signals

Advantages

  • Efficient power dissipation
  • Reduced heat generation
  • Enhanced system reliability
  • Improved overall system efficiency

Disadvantages

  • Higher cost compared to traditional bipolar transistors
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The MOSFET operates based on the principle of field-effect, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

The IPD50N06S409ATMA2 is widely used in: - Switching power supplies - Motor control circuits - DC-DC converters - Battery management systems - LED lighting applications

Detailed and Complete Alternative Models

  • IRF3205
  • FDP8870
  • STP55NF06L
  • AOD4184

In conclusion, the IPD50N06S409ATMA2 power MOSFET offers high-performance characteristics suitable for various power management applications, despite its higher cost and ESD sensitivity. Its efficient operation, fast switching speed, and compatibility with low-voltage control signals make it an ideal choice for modern electronic systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD50N06S409ATMA2 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPD50N06S409ATMA2?

    • The maximum drain-source voltage of IPD50N06S409ATMA2 is 60V.

  2. What is the continuous drain current rating of IPD50N06S409ATMA2?

    • The continuous drain current rating of IPD50N06S409ATMA2 is 50A.

  3. What is the on-state resistance (RDS(on)) of IPD50N06S409ATMA2?

    • The on-state resistance (RDS(on)) of IPD50N06S409ATMA2 is typically 0.009 ohms.

  4. What is the gate-source voltage range for proper operation of IPD50N06S409ATMA2?

    • The gate-source voltage range for proper operation of IPD50N06S409ATMA2 is typically ±20V.

  5. What are the recommended operating temperature ranges for IPD50N06S409ATMA2?

    • The recommended operating temperature ranges for IPD50N06S409ATMA2 are -55°C to 175°C.

  6. Is IPD50N06S409ATMA2 suitable for use in automotive applications?

    • Yes, IPD50N06S409ATMA2 is suitable for use in automotive applications.

  7. Does IPD50N06S409ATMA2 require a heat sink for proper thermal management?

    • It is recommended to use a heat sink for proper thermal management when using IPD50N06S409ATMA2 in high-power applications.

  8. What type of package does IPD50N06S409ATMA2 come in?

    • IPD50N06S409ATMA2 comes in a TO-252 (DPAK) package.

  9. Can IPD50N06S409ATMA2 be used in switching power supplies?

    • Yes, IPD50N06S409ATMA2 can be used in switching power supplies.

  10. What are some common applications for IPD50N06S409ATMA2?

    • Common applications for IPD50N06S409ATMA2 include motor control, DC-DC converters, and power management in various electronic devices.