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IPD50R800CEBTMA1
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IPD50R800CEBTMA1

Product Overview

Category

The IPD50R800CEBTMA1 belongs to the category of power MOSFETs.

Use

It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Package

The IPD50R800CEBTMA1 is typically available in a TO-252-3 (DPAK) package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 800V
  • Continuous Drain Current (ID): 5.6A
  • On-Resistance (RDS(on)): 0.45Ω
  • Total Gate Charge (Qg): 20nC
  • Avalanche Energy (Eas): 160mJ

Detailed Pin Configuration

The IPD50R800CEBTMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low on-resistance for reduced power dissipation
  • Fast switching speed for improved performance

Disadvantages

  • Higher cost compared to lower voltage MOSFETs
  • More complex drive circuitry required due to high voltage rating

Working Principles

The IPD50R800CEBTMA1 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IPD50R800CEBTMA1 is commonly used in: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the IPD50R800CEBTMA1 include: - IPD50R800CPXKSA1 - IPD50R800CPXKSA2 - IPD50R800CPXKSA3

In conclusion, the IPD50R800CEBTMA1 is a high-voltage power MOSFET with excellent characteristics for various power applications, making it a versatile choice for efficient power management and control.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD50R800CEBTMA1 i tekniska lösningar

  1. What is the maximum drain current of IPD50R800CEBTMA1?

    • The maximum drain current of IPD50R800CEBTMA1 is 50A.

  2. What is the typical on-state resistance of IPD50R800CEBTMA1?

    • The typical on-state resistance of IPD50R800CEBTMA1 is 0.8 ohms.

  3. What is the gate-source voltage of IPD50R800CEBTMA1?

    • The gate-source voltage of IPD50R800CEBTMA1 is ±20V.

  4. What is the maximum power dissipation of IPD50R800CEBTMA1?

    • The maximum power dissipation of IPD50R800CEBTMA1 is 300W.

  5. What are the typical applications for IPD50R800CEBTMA1?

    • IPD50R800CEBTMA1 is commonly used in motor control, power supplies, and DC-DC converters.

  6. What is the operating temperature range of IPD50R800CEBTMA1?

    • The operating temperature range of IPD50R800CEBTMA1 is -55°C to 150°C.

  7. Does IPD50R800CEBTMA1 have built-in protection features?

    • Yes, IPD50R800CEBTMA1 has built-in overcurrent protection and thermal shutdown features.

  8. What is the input capacitance of IPD50R800CEBTMA1?

    • The input capacitance of IPD50R800CEBTMA1 is typically 3700pF.

  9. Is IPD50R800CEBTMA1 RoHS compliant?

    • Yes, IPD50R800CEBTMA1 is RoHS compliant.

  10. What package type does IPD50R800CEBTMA1 come in?

    • IPD50R800CEBTMA1 is available in a TO-252-3 package.