IPD60R600P7SAUMA1
Product Overview
Category
The IPD60R600P7SAUMA1 belongs to the category of power MOSFETs.
Use
It is used for power management and switching applications in various electronic devices and systems.
Characteristics
- High voltage capability
- Low input capacitance
- Fast switching speed
- Low on-resistance
- Avalanche energy specified
- Qualified according to AEC Q101
Package
The IPD60R600P7SAUMA1 is available in a TO-252 package.
Essence
This MOSFET offers high performance and reliability for power management applications.
Packaging/Quantity
It is typically supplied in reels with a specific quantity per reel, as per the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 6.0A
- On-Resistance (RDS(on) max): 0.6Ω
- Total Gate Charge (Qg): 15nC
- Threshold Voltage (VGS(th) max): 4.0V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPD60R600P7SAUMA1 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low input capacitance enables fast switching speeds.
- Low on-resistance minimizes power losses and improves efficiency.
- AEC Q101 qualification ensures reliability for automotive applications.
Advantages and Disadvantages
Advantages
- High voltage capability
- Fast switching speed
- Low on-resistance
- Reliable for automotive applications
Disadvantages
- May not be suitable for low-voltage applications
- Higher cost compared to standard MOSFETs
Working Principles
The IPD60R600P7SAUMA1 operates based on the principles of field-effect transistors, utilizing its high voltage capability and low on-resistance to efficiently manage and switch power in electronic circuits.
Detailed Application Field Plans
The IPD60R600P7SAUMA1 is well-suited for the following application fields: - Automotive power systems - Industrial power management - Renewable energy systems - Motor control applications
Detailed and Complete Alternative Models
Some alternative models to the IPD60R600P7SAUMA1 include: - IPD50R190CE - IPD65R380E6 - IPD70R240CE
In conclusion, the IPD60R600P7SAUMA1 power MOSFET offers high-performance characteristics and reliability, making it suitable for a wide range of power management and switching applications across various industries.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD60R600P7SAUMA1 i tekniska lösningar
What is the maximum drain current of IPD60R600P7SAUMA1?
- The maximum drain current of IPD60R600P7SAUMA1 is 24A.
What is the typical on-state resistance of IPD60R600P7SAUMA1?
- The typical on-state resistance of IPD60R600P7SAUMA1 is 0.06 ohms.
What is the maximum power dissipation of IPD60R600P7SAUMA1?
- The maximum power dissipation of IPD60R600P7SAUMA1 is 625W.
What is the gate-source voltage of IPD60R600P7SAUMA1?
- The gate-source voltage of IPD60R600P7SAUMA1 is ±20V.
What are the typical applications for IPD60R600P7SAUMA1?
- IPD60R600P7SAUMA1 is commonly used in applications such as motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPD60R600P7SAUMA1?
- The operating temperature range of IPD60R600P7SAUMA1 is -55°C to 150°C.
Does IPD60R600P7SAUMA1 have built-in protection features?
- Yes, IPD60R600P7SAUMA1 has built-in protection features such as overcurrent protection and thermal shutdown.
What is the input capacitance of IPD60R600P7SAUMA1?
- The input capacitance of IPD60R600P7SAUMA1 is 2800pF.
Is IPD60R600P7SAUMA1 RoHS compliant?
- Yes, IPD60R600P7SAUMA1 is RoHS compliant.
What are the recommended mounting techniques for IPD60R600P7SAUMA1?
- IPD60R600P7SAUMA1 can be mounted using through-hole or surface-mount techniques, following the recommended PCB layout guidelines provided in the datasheet.