IPD65R380E6ATMA1
Product Overview
Category
The IPD65R380E6ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a power semiconductor device for switching and amplifying electronic signals in various applications.
Characteristics
- High voltage capability
- Low gate charge
- Fast switching speed
- Low on-resistance
- Avalanche energy specified
Package
The IPD65R380E6ATMA1 is typically available in a TO-252-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is commonly packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 6.5A
- Power Dissipation (PD): 48W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPD65R380E6ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in high-power applications.
- Low gate charge enables fast switching speeds, reducing power loss.
- Low on-resistance minimizes conduction losses and improves efficiency.
Advantages and Disadvantages
Advantages
- High voltage capability suitable for diverse applications
- Low gate charge for fast switching
- Low on-resistance for improved efficiency
Disadvantages
- May require additional circuitry for protection against overvoltage and overcurrent conditions
- Sensitive to electrostatic discharge (ESD) and requires careful handling during assembly
Working Principles
The IPD65R380E6ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD65R380E6ATMA1 is widely used in: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPD65R380E6ATMA1 include: - IPD60R190C6ATMA1 - IPD50R380CE - IPD70R600P7S
In conclusion, the IPD65R380E6ATMA1 is a versatile power MOSFET with high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of applications in various industries.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD65R380E6ATMA1 i tekniska lösningar
What is the maximum drain-source voltage of IPD65R380E6ATMA1?
- The maximum drain-source voltage of IPD65R380E6ATMA1 is 650V.
What is the typical on-state resistance of IPD65R380E6ATMA1?
- The typical on-state resistance of IPD65R380E6ATMA1 is 380mΩ.
What is the maximum continuous drain current of IPD65R380E6ATMA1?
- The maximum continuous drain current of IPD65R380E6ATMA1 is 25A.
What are the typical gate charge and total gate charge of IPD65R380E6ATMA1?
- The typical gate charge is 20nC, and the total gate charge is 50nC.
What is the typical input capacitance of IPD65R380E6ATMA1?
- The typical input capacitance of IPD65R380E6ATMA1 is 3200pF.
What is the operating temperature range of IPD65R380E6ATMA1?
- The operating temperature range of IPD65R380E6ATMA1 is -55°C to 150°C.
Is IPD65R380E6ATMA1 suitable for high-frequency switching applications?
- Yes, IPD65R380E6ATMA1 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
Does IPD65R380E6ATMA1 have built-in protection features?
- Yes, IPD65R380E6ATMA1 has built-in overcurrent protection and thermal shutdown features.
Can IPD65R380E6ATMA1 be used in automotive applications?
- Yes, IPD65R380E6ATMA1 is designed for automotive applications and meets the necessary quality and reliability standards.
What are some common technical solutions where IPD65R380E6ATMA1 can be applied?
- IPD65R380E6ATMA1 can be used in motor control, power supplies, lighting, and other high-voltage switching applications.