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IPD70N12S311ATMA1
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IPD70N12S311ATMA1

Product Overview

Category

The IPD70N12S311ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The IPD70N12S311ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 120V
  • Continuous Drain Current (ID): 70A
  • RDS(ON) Max: 31mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD70N12S311ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power losses and improves efficiency.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Fast switching speed enhances performance
  • Low on-resistance reduces power dissipation

Disadvantages

  • May require additional circuitry for optimal performance in certain applications
  • Sensitivity to static electricity requires careful handling during assembly

Working Principles

The IPD70N12S311ATMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPD70N12S311ATMA1 is widely used in: - Power supplies - Motor control systems - Inverters - Switching regulators - LED lighting applications

Detailed and Complete Alternative Models

  • IPD70N12S4L-16
  • IPD70R2K0P7S4-08
  • IPD70R600P7S4-08
  • IPD70R600P7S4-08

In conclusion, the IPD70N12S311ATMA1 power MOSFET offers high voltage capability, fast switching speed, and low on-resistance, making it an essential component in various power management and control applications. Its characteristics and functional features make it suitable for a wide range of electronic systems and devices.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD70N12S311ATMA1 i tekniska lösningar

  1. What is the maximum drain-source voltage of IPD70N12S311ATMA1?

    • The maximum drain-source voltage is 120V.

  2. What is the continuous drain current rating of IPD70N12S311ATMA1?

    • The continuous drain current rating is 70A.

  3. What is the on-state resistance (RDS(on)) of IPD70N12S311ATMA1?

    • The on-state resistance is typically 9.5mΩ at VGS = 10V.

  4. Can IPD70N12S311ATMA1 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPD70N12S311ATMA1?

    • The operating temperature range is -40°C to 175°C.

  6. Does IPD70N12S311ATMA1 have built-in protection features?

    • Yes, it has built-in overcurrent and thermal protection.

  7. What type of package does IPD70N12S311ATMA1 come in?

    • It comes in a TO-252-3 package.

  8. Is IPD70N12S311ATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching due to its low RDS(on).

  9. What gate-source voltage is required to fully enhance IPD70N12S311ATMA1?

    • A gate-source voltage of 10V is typically required for full enhancement.

  10. Can IPD70N12S311ATMA1 be used in power supply and motor control applications?

    • Yes, it is commonly used in power supply and motor control applications.