IPD80R2K4P7ATMA1
Product Overview
Category
The IPD80R2K4P7ATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage power MOSFET for various electronic applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPD80R2K4P7ATMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is usually packaged in reels with a quantity of 2500 pieces per reel.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 2.4A
- On-Resistance (RDS(on)): 3.7Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 12nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPD80R2K4P7ATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability for power applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Low gate charge for enhanced gate drive performance
Advantages and Disadvantages
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Efficient switching performance
Disadvantages
- Limited continuous drain current compared to higher-rated MOSFETs
- Sensitive to static discharge due to its high voltage capability
Working Principles
The IPD80R2K4P7ATMA1 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPD80R2K4P7ATMA1 is commonly used in: - Switching power supplies - Motor control systems - LED lighting applications - Solar inverters - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPD80R2K4P7ATMA1 include: - IPD60R2K0C6ATMA1 - IPD100N04S4L-08 - IPD120N04S4L-08 - IPD140N04S4L-08
In conclusion, the IPD80R2K4P7ATMA1 is a high-voltage power MOSFET with excellent characteristics suitable for various electronic applications, especially those requiring efficient power management and control.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD80R2K4P7ATMA1 i tekniska lösningar
Sure, here are 10 common questions and answers related to the application of IPD80R2K4P7ATMA1 in technical solutions:
What is the maximum drain current of IPD80R2K4P7ATMA1?
- The maximum drain current of IPD80R2K4P7ATMA1 is 80A.
What is the voltage rating of IPD80R2K4P7ATMA1?
- The voltage rating of IPD80R2K4P7ATMA1 is 40V.
What type of package does IPD80R2K4P7ATMA1 come in?
- IPD80R2K4P7ATMA1 comes in a TO-252-3 package.
What is the on-resistance of IPD80R2K4P7ATMA1?
- The on-resistance of IPD80R2K4P7ATMA1 is 2.4mΩ.
Is IPD80R2K4P7ATMA1 suitable for high-frequency applications?
- Yes, IPD80R2K4P7ATMA1 is suitable for high-frequency applications due to its low on-resistance.
Can IPD80R2K4P7ATMA1 be used in automotive applications?
- Yes, IPD80R2K4P7ATMA1 is designed for automotive applications and meets the necessary standards.
What is the thermal resistance of IPD80R2K4P7ATMA1?
- The thermal resistance of IPD80R2K4P7ATMA1 is 1.7°C/W.
Does IPD80R2K4P7ATMA1 have built-in protection features?
- Yes, IPD80R2K4P7ATMA1 has built-in overcurrent and overtemperature protection.
What is the recommended operating temperature range for IPD80R2K4P7ATMA1?
- The recommended operating temperature range for IPD80R2K4P7ATMA1 is -55°C to 175°C.
Can IPD80R2K4P7ATMA1 be used in power management applications?
- Yes, IPD80R2K4P7ATMA1 is suitable for power management applications due to its high current and voltage ratings.
I hope these questions and answers are helpful! Let me know if you need further assistance.