IRFB812PBF

Product Overview

Use

It is commonly used in applications requiring high power switching and amplification.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The IRFB812PBF is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic circuits.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 100V
Continuous Drain Current (ID): 97A
RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
Gate-Source Voltage (VGS): ±20V
Power Dissipation (PD): 280W

Detailed Pin Configuration

The IRFB812PBF features a standard pin configuration for a TO-220AB package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in a wide range of applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid response in switching applications.

Advantages

Suitable for high-power applications
Low conduction losses
Enhanced thermal performance

Disadvantages

Higher gate drive requirements compared to some lower voltage MOSFETs
Larger physical size due to higher voltage rating

Working Principles

The IRFB812PBF operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IRFB812PBF is widely used in the following applications: - Switching power supplies - Motor control - Inverters - Audio amplifiers - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the IRFB812PBF include: - IRFB7430PbF - IRFB7434PbF - IRFB7530PbF - IRFB7534PbF

In conclusion, the IRFB812PBF power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various high-power applications such as switching power supplies, motor control, and audio amplifiers.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IRFB812PBF i tekniska lösningar

What is the maximum voltage rating of the IRFB812PBF MOSFET?
- The maximum voltage rating of the IRFB812PBF MOSFET is 100V.
What is the continuous drain current rating of the IRFB812PBF MOSFET?
- The continuous drain current rating of the IRFB812PBF MOSFET is 100A.
What is the on-state resistance (RDS(on)) of the IRFB812PBF MOSFET?
- The on-state resistance (RDS(on)) of the IRFB812PBF MOSFET is typically 4.5mΩ at VGS = 10V.
Can the IRFB812PBF be used in high-frequency switching applications?
- Yes, the IRFB812PBF can be used in high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
What is the gate threshold voltage of the IRFB812PBF MOSFET?
- The gate threshold voltage of the IRFB812PBF MOSFET is typically 2-4V.
Is the IRFB812PBF suitable for automotive applications?
- Yes, the IRFB812PBF is suitable for automotive applications due to its high current and voltage ratings.
What are the typical thermal characteristics of the IRFB812PBF MOSFET?
- The IRFB812PBF has a junction-to-ambient thermal resistance of 40°C/W and a junction-to-case thermal resistance of 1.5°C/W.
Does the IRFB812PBF require a heatsink in high-power applications?
- Yes, in high-power applications, it is recommended to use a heatsink to dissipate heat effectively.
What are the common protection features for the IRFB812PBF?
- The IRFB812PBF includes overcurrent protection, overvoltage protection, and thermal shutdown features.
Can the IRFB812PBF be used in parallel to increase current handling capability?
- Yes, the IRFB812PBF can be used in parallel to increase the overall current handling capability in a circuit.