Infineon Technologies
Bild kan vara representation.
Se specifikationer för produktinformation.
IRFP4668PBF
Visa detalj Datablad

IRFP4668PBF

Product Overview

Category

The IRFP4668PBF belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching circuits.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IRFP4668PBF is typically available in a TO-247AC package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in tubes or trays, with quantities varying based on supplier specifications.

Specifications

  • Drain-Source Voltage (VDS): 200V
  • Continuous Drain Current (ID): 130A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Gate Charge (Qg): 150nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IRFP4668PBF has a standard pin configuration for a TO-247AC package: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High input impedance
  • Low output impedance
  • Fast switching characteristics
  • Low power dissipation

Advantages

  • High voltage capability allows for use in a wide range of applications
  • Low on-resistance minimizes power loss and improves efficiency
  • Fast switching speed enables high-frequency operation

Disadvantages

  • Relatively large package size compared to some other MOSFETs
  • Higher gate capacitance may require careful driver design for optimal performance

Working Principles

The IRFP4668PBF operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The IRFP4668PBF is well-suited for use in: - Switch-mode power supplies - Motor drives - Inverters - DC-DC converters - Solar inverters

Detailed and Complete Alternative Models

Some alternative models to the IRFP4668PBF include: - IRFP4668 - IRFP4668LC - IRFP4668PBF-ND

In conclusion, the IRFP4668PBF is a versatile power MOSFET with excellent characteristics suitable for a wide range of high-power applications.

[Word count: 345]

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IRFP4668PBF i tekniska lösningar

  1. What is the maximum drain-source voltage of IRFP4668PBF?

    • The maximum drain-source voltage of IRFP4668PBF is 200 volts.

  2. What is the continuous drain current rating of IRFP4668PBF?

    • The continuous drain current rating of IRFP4668PBF is 130 amperes.

  3. What is the on-state resistance (RDS(on)) of IRFP4668PBF?

    • The on-state resistance (RDS(on)) of IRFP4668PBF is typically 4.5 milliohms at VGS = 10V.

  4. What is the gate-source voltage (VGS) for IRFP4668PBF?

    • The gate-source voltage (VGS) for IRFP4668PBF is ±20 volts.

  5. What are the typical applications for IRFP4668PBF?

    • IRFP4668PBF is commonly used in high power switching applications, motor control, and power supplies.

  6. What is the operating temperature range of IRFP4668PBF?

    • The operating temperature range of IRFP4668PBF is -55°C to 175°C.

  7. Does IRFP4668PBF require a heatsink for operation?

    • Yes, IRFP4668PBF typically requires a heatsink for efficient heat dissipation.

  8. What is the input capacitance (Ciss) of IRFP4668PBF?

    • The input capacitance (Ciss) of IRFP4668PBF is typically 5200 pF.

  9. Is IRFP4668PBF suitable for use in automotive applications?

    • Yes, IRFP4668PBF is suitable for use in automotive applications.

  10. What are the recommended mounting techniques for IRFP4668PBF?

    • IRFP4668PBF can be mounted using through-hole or surface mount techniques, following the manufacturer's guidelines for proper thermal management.