DS1249Y-85IND

Product Overview

Category: Integrated Circuits (ICs)

Use: The DS1249Y-85IND is a non-volatile static RAM (NVSRAM) integrated circuit. It combines the benefits of both SRAM and EEPROM technologies, providing high-speed read/write operations along with non-volatility.

Characteristics: - High-speed access time - Non-volatile storage - Low power consumption - Durable and reliable - Easy integration into existing systems

Package: The DS1249Y-85IND is available in a 32-pin DIP (Dual In-line Package) format, which allows for easy installation and replacement.

Essence: This IC offers the ability to retain data even when power is lost, making it ideal for applications that require non-volatile memory storage.

Packaging/Quantity: The DS1249Y-85IND is typically packaged in tubes or trays, with quantities varying based on customer requirements.

Specifications

• Memory Size: 4 Megabits (512K x 8)
• Access Time: 85ns
• Supply Voltage: 4.5V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: 1 million write cycles

Detailed Pin Configuration

The DS1249Y-85IND has a total of 32 pins, each serving a specific function. Here is a detailed pin configuration:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A18)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Power Supply (VCC)

Functional Features

• High-speed read and write operations
• Non-volatile storage of data
• Easy integration into existing systems
• Low power consumption
• Durable and reliable performance

Advantages and Disadvantages

Advantages: - Combines the benefits of SRAM and EEPROM technologies - High-speed access time - Non-volatile storage - Low power consumption - Durable and reliable

Disadvantages: - Limited memory size (4 Megabits) - Relatively higher cost compared to traditional SRAM

Working Principles

The DS1249Y-85IND utilizes a combination of SRAM and EEPROM technologies. It stores data in non-volatile memory cells, which retain information even when power is lost. The IC uses a small amount of energy to maintain the stored data, making it suitable for applications that require both high-speed access and non-volatility.

Detailed Application Field Plans

The DS1249Y-85IND can be used in various applications, including but not limited to: - Industrial control systems - Automotive electronics - Medical devices - Communication equipment - Data logging devices

Detailed and Complete Alternative Models

1. DS1249AB-70IND: 4 Megabit NVSRAM with an access time of 70ns.
2. DS1249Y-120IND: 4 Megabit NVSRAM with an access time of 120ns.
3. DS1249Y-150IND: 4 Megabit NVSRAM with an access time of 150ns.

These alternative models offer different access times to suit specific application requirements while providing similar non-volatile storage capabilities.

In conclusion, the DS1249Y-85IND is a non-volatile static RAM integrated circuit that combines the benefits of SRAM and EEPROM technologies. With its high-speed access time, non-volatile storage, and easy integration, it finds applications in various industries. While it has some limitations, such as limited memory size and higher cost compared to traditional SRAM, it offers a reliable solution for data storage in systems that require both speed and non-volatility.