AT49F001A-45VI

Product Overview

Category

AT49F001A-45VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit of data.
• Fast access time: Provides quick data retrieval.
• Low power consumption: Operates efficiently with minimal power usage.

Package

AT49F001A-45VI is available in a standard integrated circuit (IC) package.

Essence

The essence of AT49F001A-45VI lies in its ability to provide reliable and persistent data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or trays, with each containing a specific quantity of ICs.

Specifications

• Memory Type: Flash
• Memory Size: 1 Megabit
• Organization: 128K x 8
• Supply Voltage: 2.7V - 5.5V
• Access Time: 45 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RESET: Reset pin
8. RP/RB: Ready/Busy output
9. NC: No connection
10. GND: Ground

Functional Features

• Easy integration: Compatible with standard microcontrollers and interface protocols.
• Versatile operation modes: Supports both read and write operations.
• Erase capability: Allows for selective erasure of memory blocks.
• Protection mechanisms: Provides options for write protection and data security.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity accommodates large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory cells have a finite number of erase/write cycles.
• Relatively higher cost compared to other memory technologies.
• Susceptible to data corruption from electrical interference or physical damage.

Working Principles

AT49F001A-45VI utilizes flash memory technology, which employs floating-gate transistors to store and retrieve data. The memory cells are organized into an array, with each cell capable of holding one bit of information. Data can be written to the memory by applying appropriate voltage levels to the control pins. Reading data involves sensing the voltage levels stored in the memory cells.

Detailed Application Field Plans

AT49F001A-45VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Alternative Models

1. AT49F002A-55VI: 2 Megabit flash memory with faster access time.
2. AT49F004A-70VI: 4 Megabit flash memory with higher storage capacity.
3. AT49F008A-90VI: 8 Megabit flash memory with extended temperature range.

These alternative models offer increased memory size, improved performance, and enhanced features while maintaining compatibility with the same interface.

In conclusion, AT49F001A-45VI is a non-volatile memory device that provides reliable data storage in various electronic applications. Its high storage capacity, fast access time, and low power consumption make it suitable for a wide range of use cases. However, it is important to consider its limitations, such as limited endurance and susceptibility to data corruption. Alternative models with different specifications are available to cater to specific requirements.