AT49F001NT-55TI

Product Overview

Category

AT49F001NT-55TI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49F001NT-55TI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 55 nanoseconds.
• Low power consumption: The AT49F001NT-55TI operates on low power, making it suitable for battery-powered devices.

Package

The AT49F001NT-55TI is available in a standard 32-pin plastic DIP (Dual In-line Package) format.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F001NT-55TI is typically packaged in reels or tubes, with a quantity of 25 pieces per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V ±10%
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49F001NT-55TI has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. NC
32. NC

Functional Features

• Easy integration: The AT49F001NT-55TI can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: This device supports a standard parallel interface for easy communication with other components.
• Sector erase capability: The AT49F001NT-55TI allows for erasing specific sectors of memory, providing flexibility in data management.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies.
• Relatively higher cost per bit compared to certain alternative memory options.

Working Principles

The AT49F001NT-55TI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. To erase data, the charge is removed from the cell. This mechanism allows for reliable and non-volatile data storage.

Detailed Application Field Plans

The AT49F001NT-55TI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002NT-55TI: This model offers double the storage capacity of AT49F001NT-55TI (2 megabits).
2. AT49F004NT-55TI: With a capacity of 4 megabits, this model provides even higher storage capabilities.
3. AT49F008NT-55TI: Offering 8 megabits of storage, this model is suitable for applications requiring larger memory capacity.

These alternative models provide options with increased storage capacities to cater to different application requirements.

Word count: 550 words