SST39SF020A-55-4I-WHE

Product Overview

Category

The SST39SF020A-55-4I-WHE belongs to the category of Flash Memory.

Use

This product is primarily used for storing and retrieving digital data in electronic devices.

Characteristics

• Non-volatile memory: The SST39SF020A-55-4I-WHE retains stored data even when power is removed.
• High storage capacity: This flash memory chip has a capacity of 2 megabits (256 kilobytes).
• Fast access times: It offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: The SST39SF020A-55-4I-WHE is designed to minimize energy usage.
• Wide operating temperature range: It can function reliably in temperatures ranging from -40°C to 85°C.

Package

The SST39SF020A-55-4I-WHE is available in a standard 32-pin plastic DIP (Dual In-line Package).

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for various electronic applications.

Packaging/Quantity

The SST39SF020A-55-4I-WHE is typically packaged in reels or tubes, with each package containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Supply voltage: 2.7V - 3.6V
• Access time: 55 ns
• Organization: 256K x 8 bits
• Erase/Write cycles: 100,000 minimum
• Data retention: 20 years
• Package type: 32-pin DIP

Detailed Pin Configuration

The SST39SF020A-55-4I-WHE has the following pin configuration:

1. VCC - Power supply
2. A0-A17 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Block protect
8. NC - No connection
9. VSS - Ground

Functional Features

• Block Erase: The SST39SF020A-55-4I-WHE supports block erase operations, allowing for efficient erasure of specific memory sections.
• Byte Programming: It enables individual byte programming, providing flexibility in modifying data stored in the memory.
• Hardware and Software Protection: This flash memory chip offers protection mechanisms to prevent unauthorized access or accidental modification of stored data.
• Automatic Sleep Mode: The device enters a low-power sleep mode when not in use, conserving energy.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Low power consumption
• Wide operating temperature range
• Block erase and byte programming capabilities
• Protection mechanisms for data security

Disadvantages

• Relatively slower access times compared to other types of memory (e.g., RAM)
• Limited write endurance (100,000 cycles)

Working Principles

The SST39SF020A-55-4I-WHE utilizes a floating-gate transistor technology to store digital data. It employs a combination of electrical charges to represent binary values (0s and 1s). When writing data, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. During read operations, the stored charges are detected, allowing retrieval of the stored data.

Detailed Application Field Plans

The SST39SF020A-55-4I-WHE finds applications in various electronic devices and systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. SST39SF010A-70-4C-NHE: 1 megabit flash memory chip with a faster access time of 70 ns.
2. SST39VF040-70-4C-WH: 4 megabit flash memory chip with a wider operating temperature range (-40°C to 105°C).
3. SST39LF800A-45-4C-B3K: 800 kilobit flash memory chip with lower power consumption and extended data retention.

These alternative models offer different specifications and features, allowing users to choose the most suitable option for their specific requirements.

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