M29F400BB70N6

Product Overview

Category

M29F400BB70N6 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F400BB70N6 retains stored data even when power is removed.
• High capacity: With a storage capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Fast access time: The device offers quick read and write operations, ensuring efficient data retrieval and storage.
• Reliable: It has a high endurance and can withstand numerous read and write cycles without data corruption.
• Low power consumption: The M29F400BB70N6 operates on low power, making it suitable for battery-powered devices.

Package

The M29F400BB70N6 is available in a standard plastic package, which provides protection and facilitates easy integration into electronic circuits.

Essence

The essence of M29F400BB70N6 lies in its ability to provide reliable and non-volatile data storage in electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29F400BB70N6 devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 Megabits (512 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time:
  • Read: 70 ns
  • Program: 10 ms
  • Erase: 1.5 s
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F400BB70N6 has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. VCC - Power Supply
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. WE# - Write Enable
30. CE# - Chip Enable
31. OE# - Output Enable
32. GND - Ground

Functional Features

• Read Operation: The M29F400BB70N6 allows the retrieval of stored data by providing the appropriate address inputs and enabling the chip and output.
• Program Operation: This device supports programming new data into its memory cells by applying the necessary voltage levels and write enable signal.
• Erase Operation: The M29F400BB70N6 can erase its memory cells, allowing for the removal of previously stored data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity allows for ample data storage.
• Fast access time enables quick data retrieval and storage.
• Reliable endurance ensures long-term data integrity.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Relatively slower program and erase times compared to some other memory technologies.
• Limited storage capacity compared to higher-density memory devices.

Working Principles

The M29F400BB70N6 utilizes a technology called Flash memory. It stores data in memory cells that consist of floating-gate transistors. These transistors can retain their charge even when power is removed, allowing for non-volatile data storage. The device operates by applying specific voltage levels to perform read, program, and erase operations on these memory cells.

Detailed Application Field Plans

The M29F400BB70N6 finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets