M29F400BT90N1

Product Overview

Category

M29F400BT90N1 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F400BT90N1 retains stored data even when power is removed.
• High capacity: With a storage capacity of 4 megabits (512 kilobytes), it can store a significant amount of data.
• Fast access time: The M29F400BT90N1 offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: It consumes minimal power during operation, making it suitable for battery-powered devices.
• Reliable: This memory device has a high endurance and can withstand numerous read and write cycles without data loss.

Package

The M29F400BT90N1 is available in a compact and industry-standard TSOP48 package.

Essence

The essence of the M29F400BT90N1 lies in its ability to provide reliable and non-volatile storage for electronic devices, ensuring data integrity and accessibility.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29F400BT90N1 devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 4 Megabits (512 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The M29F400BT90N1 features a parallel interface with the following pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. A26 - Address Input
28. A27 - Address Input
29. A28 - Address Input
30. A29 - Address Input
31. A30 - Address Input
32. A31 - Address Input
33. BYTE# - Byte Selection Input
34. CE# - Chip Enable Input
35. WE# - Write Enable Input
36. OE# - Output Enable Input
37. I/O0 - Data Input/Output
38. I/O1 - Data Input/Output
39. I/O2 - Data Input/Output
40. I/O3 - Data Input/Output
41. I/O4 - Data Input/Output
42. I/O5 - Data Input/Output
43. I/O6 - Data Input/Output
44. I/O7 - Data Input/Output
45. VCC - Power Supply
46. GND - Ground

Functional Features

• Fast Read and Write Operations: The M29F400BT90N1 offers quick access times, allowing for efficient data retrieval and storage.
• Sector Erase Capability: This memory device supports sector erase operations, enabling selective erasure of specific memory sectors.
• Data Protection: The M29F400BT90N1 incorporates various mechanisms to protect stored data from accidental modification or corruption.
• Compatibility: It is compatible with a wide range of microcontrollers and other devices that support parallel flash memory interfaces.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick data retrieval and storage.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable endurance ensures long-term data integrity.

Disadvantages

• Parallel interface may require more pins and complex circuitry compared to serial interfaces.
• Limited storage capacity compared to newer flash memory technologies.

Working Principles

The M29F400BT90N