M29F800DB55N6E

Product Overview

Category

M29F800DB55N6E belongs to the category of Flash Memory.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

• Non-volatile memory
• High-speed read and write operations
• Low power consumption
• Wide operating voltage range
• Durable and reliable

Package

M29F800DB55N6E is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of M29F800DB55N6E lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The pin configuration of M29F800DB55N6E is as follows:

1. VCC - Power supply voltage
2. A0-A19 - Address inputs
3. CE - Chip enable
4. OE - Output enable
5. WE - Write enable
6. I/O0-I/O7 - Data input/output lines
7. RY/BY# - Ready/Busy output
8. RESET# - Reset input
9. WP#/ACC - Write protect/acceleration input
10. VSS - Ground

Functional Features

• Fast random access times for efficient data retrieval
• Easy integration into existing systems due to standard pin configuration
• Low power consumption for extended battery life in portable devices
• High endurance for reliable long-term data storage
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• High-speed read and write operations
• Wide operating voltage range allows compatibility with different systems
• Durable and reliable, suitable for harsh environments
• Easy integration into existing designs

Disadvantages

• Limited storage capacity compared to other memory technologies
• Erase and program cycles have a finite limit

Working Principles

M29F800DB55N6E utilizes the principles of flash memory technology. It stores digital information by trapping electric charges within floating gate transistors. These charges represent binary data (0s and 1s). The stored data can be accessed and modified through specific electrical signals applied to the device's pins.

Detailed Application Field Plans

M29F800DB55N6E finds applications in various electronic devices, including but not limited to: - Mobile phones - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to M29F800DB55N6E are: - AT29C010A-12PC (Atmel) - S29GL064N90TFI040 (Cypress Semiconductor) - W25Q64JVSSIQ (Winbond Electronics)

These alternatives provide comparable features and can be considered based on specific project requirements.

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