M29W256GL7AZS6E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Surface mount package (SOP)
• Essence: Non-volatile memory for storing digital data
• Packaging/Quantity: Available in reels, 2500 units per reel

Specifications

• Memory Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 70 ns (max)
• Page Size: 512 bytes
• Block Erase Time: 2 ms (typical)

Detailed Pin Configuration

The M29W256GL7AZS6E flash memory has the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/byte control
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/control input
10. VSS: Ground

Functional Features

• High-Speed Read/Write: The M29W256GL7AZS6E offers fast access times, allowing for quick data retrieval and storage.
• Non-Volatile Storage: The flash memory retains data even when power is removed, ensuring data integrity.
• Large Capacity: With a capacity of 256 Megabits, it provides ample space for storing digital information.
• Reliable Performance: The memory is designed to operate in a wide temperature range, making it suitable for various applications.

Advantages and Disadvantages

Advantages: - High capacity for data storage - Fast read/write speeds - Non-volatile memory retains data without power - Reliable performance in different temperature conditions

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Higher cost compared to other types of memory

Working Principles

The M29W256GL7AZS6E flash memory utilizes a floating gate transistor technology. It stores data by trapping electric charge within the floating gate, which alters the transistor's behavior. This allows the memory to retain data even when power is removed. To write data, an electrical charge is applied to the floating gate, modifying its state. Reading data involves detecting the transistor's behavior based on the stored charge.

Detailed Application Field Plans

The M29W256GL7AZS6E flash memory finds applications in various electronic devices, including:

1. Smartphones: Used for storing operating system files, applications, and user data.
2. Tablets: Provides storage for multimedia content, documents, and applications.
3. Digital Cameras: Stores captured images and videos.
4. Embedded Systems: Used as non-volatile storage for firmware, configuration data, and logs.
5. Automotive Electronics: Enables data storage for infotainment systems, navigation, and vehicle diagnostics.

Detailed and Complete Alternative Models

1. M29W256GL7AN6E: Similar flash memory with slightly different specifications.
2. M29W256GL7AXX: Flash memory variant with extended temperature range.
3. M29W256GL7AYY: Flash memory variant with lower power consumption.

(Note: These alternative models are provided for reference and may have different specifications or features. Please refer to the respective datasheets for detailed information.)

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