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MT29F256G08CMCABH2-12ITZ:A
Product Overview
Category
MT29F256G08CMCABH2-12ITZ:A belongs to the category of NAND Flash Memory.
Use
This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).
Characteristics
- High storage capacity: The MT29F256G08CMCABH2-12ITZ:A offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
- Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
- Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
- Low power consumption: The MT29F256G08CMCABH2-12ITZ:A is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
- Compact package: This NAND flash memory is packaged in a small form factor, making it suitable for integration into compact electronic devices.
Packaging/Quantity
The MT29F256G08CMCABH2-12ITZ:A is typically packaged in a surface-mount technology (SMT) package. It is available in various quantities, ranging from individual units to bulk packaging for larger-scale production.
Specifications
- Part Number: MT29F256G08CMCABH2-12ITZ:A
- Memory Type: NAND Flash
- Storage Capacity: 256 GB
- Interface: Universal Flash Storage (UFS)
- Voltage Supply: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Package Type: TSOP (Thin Small Outline Package)
- Pin Count: 48 pins
Detailed Pin Configuration
The MT29F256G08CMCABH2-12ITZ:A has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:
- VCCQ - Voltage Supply for I/O
- VCC - Power Supply
- NC - No Connection
- ALE - Address Latch Enable
- CLE - Command Latch Enable
- RE - Read Enable
- WE - Write Enable
- WP - Write Protect
- R/B# - Ready/Busy
- CE# - Chip Enable
- CEB# - Chip Enable (Bar)
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- NC - No Connection
- GND - Ground
Functional Features
- High-speed data transfer: The MT29F256G08CMCABH2-12ITZ:A supports fast read and write operations, allowing for efficient data access.
- Error correction: This NAND flash memory incorporates advanced error correction techniques to ensure data integrity and reliability.
- Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
- Bad block management: It includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining optimal performance.
Advantages and Disadvantages
Advantages
- Large storage capacity
- Fast data transfer rate
- Reliable performance
- Low power consumption
- Compact form factor
Disadvantages
- Relatively higher cost compared to other storage technologies
- Limited endurance due to the finite number of program/erase cycles
Working Principles
The MT29F256G08CMCABH2-12ITZ:A utilizes NAND flash memory
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT29F256G08CMCABH2-12ITZ:A i tekniska lösningar
1. What is the MT29F256G08CMCABH2-12ITZ:A?
The MT29F256G08CMCABH2-12ITZ:A is a specific model of NAND flash memory chip manufactured by Micron Technology. It has a capacity of 256 gigabits (32 gigabytes) and operates at a speed of 12 nanoseconds.
2. What are the typical applications of the MT29F256G08CMCABH2-12ITZ:A?
The MT29F256G08CMCABH2-12ITZ:A is commonly used in various technical solutions that require high-capacity, non-volatile storage. Some typical applications include solid-state drives (SSDs), embedded systems, automotive electronics, industrial control systems, and consumer electronics.
3. What is the voltage requirement for the MT29F256G08CMCABH2-12ITZ:A?
The MT29F256G08CMCABH2-12ITZ:A operates at a voltage range of 2.7V to 3.6V.
4. What is the interface protocol supported by the MT29F256G08CMCABH2-12ITZ:A?
The MT29F256G08CMCABH2-12ITZ:A supports the standard asynchronous NAND interface protocol.
5. Can the MT29F256G08CMCABH2-12ITZ:A be used as a boot device?
Yes, the MT29F256G08CMCABH2-12ITZ:A can be used as a boot device in certain applications. However, it requires additional hardware and software support to enable booting from the NAND flash memory.
6. What is the endurance rating of the MT29F256G08CMCABH2-12ITZ:A?
The MT29F256G08CMCABH2-12ITZ:A has an endurance rating of 3,000 program/erase cycles per block.
7. Does the MT29F256G08CMCABH2-12ITZ:A support error correction codes (ECC)?
Yes, the MT29F256G08CMCABH2-12ITZ:A supports hardware-based ECC to ensure data integrity and reliability.
8. What is the operating temperature range for the MT29F256G08CMCABH2-12ITZ:A?
The MT29F256G08CMCABH2-12ITZ:A has an operating temperature range of -40°C to +85°C, making it suitable for a wide range of environments.
9. Can the MT29F256G08CMCABH2-12ITZ:A be used in high-reliability applications?
Yes, the MT29F256G08CMCABH2-12ITZ:A is designed to meet the requirements of various high-reliability applications, including automotive and industrial systems.
10. Is the MT29F256G08CMCABH2-12ITZ:A a lead-free and RoHS-compliant component?
Yes, the MT29F256G08CMCABH2-12ITZ:A is manufactured using lead-free materials and is compliant with the Restriction of Hazardous Substances (RoHS) directive.