Micron Technology Inc.
Bild kan vara representation.
Se specifikationer för produktinformation.
MT29F64G08AEEDBJ4-12:D

MT29F64G08AEEDBJ4-12:D

Product Overview

Category

MT29F64G08AEEDBJ4-12:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: MT29F64G08AEEDBJ4-12:D offers a storage capacity of 64 gigabytes (GB).
  • Fast data transfer rate: It provides high-speed read and write operations, allowing for efficient data processing.
  • Reliable performance: This NAND flash memory ensures data integrity and durability, making it suitable for long-term storage applications.
  • Low power consumption: The product is designed to consume minimal power, enhancing battery life in portable devices.
  • Compact package: MT29F64G08AEEDBJ4-12:D comes in a small form factor, enabling its integration into space-constrained electronic devices.
  • RoHS compliant: It adheres to the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Package and Quantity

The MT29F64G08AEEDBJ4-12:D NAND flash memory is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

  • Part Number: MT29F64G08AEEDBJ4-12:D
  • Memory Type: NAND Flash
  • Storage Capacity: 64 GB
  • Organization: 8 Gb x 8
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SMT
  • Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

The MT29F64G08AEEDBJ4-12:D NAND flash memory has the following pin configuration:

  1. VCC - Power supply voltage
  2. GND - Ground
  3. A0-A18 - Address inputs
  4. DQ0-DQ7 - Data input/output
  5. WE# - Write enable
  6. CE# - Chip enable
  7. RE# - Read enable
  8. CLE - Command latch enable
  9. ALE - Address latch enable
  10. R/B# - Ready/Busy status
  11. WP# - Write protect
  12. RP# - Reset/Power down
  13. NC - No connection

Please refer to the datasheet for a complete pinout diagram.

Functional Features

  • Page Program: The MT29F64G08AEEDBJ4-12:D supports fast page programming, allowing data to be written efficiently.
  • Block Erase: It enables the erasure of entire blocks of data, providing flexibility in managing storage space.
  • Random Access: This NAND flash memory allows random access to individual memory cells, facilitating quick retrieval of data.
  • Error Correction Code (ECC): ECC algorithms are implemented to ensure data integrity and reliability.
  • Wear Leveling: The product incorporates wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast data transfer rate
  • Low power consumption
  • Compact form factor
  • Reliable performance

Disadvantages

  • Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
  • Relatively higher cost per gigabyte compared to other storage technologies.

Working Principles

The MT29F64G08AEEDBJ4-12:D NAND flash memory utilizes a floating-gate transistor structure to store data. It employs a series of memory cells organized in blocks, with each cell capable of storing multiple bits of information. Data is written by applying voltage to the control gate and draining it through the source terminal. Erasure is achieved by applying a higher voltage to remove the charge trapped in the floating gate.

Detailed Application Field Plans

The MT29F64G08AEEDBJ4-12:D NAND flash memory finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

  1. MT29F64G08CBAAAWP-IT:C
  2. MT29F64G08CBAAWP-IT:E
  3. MT29F64G08CBAAWP-IT:G
  4. MT29F64G08CBAAWP-IT:K

These alternative models offer similar specifications and functionality to the MT29F64G08

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MT29F64G08AEEDBJ4-12:D i tekniska lösningar

  1. Question: What is the capacity of the MT29F64G08AEEDBJ4-12:D memory chip?
    Answer: The MT29F64G08AEEDBJ4-12:D has a capacity of 64 gigabits (8 gigabytes).

  2. Question: What is the voltage requirement for operating this memory chip?
    Answer: The MT29F64G08AEEDBJ4-12:D operates at a voltage range of 2.7V to 3.6V.

  3. Question: What is the data transfer rate of this memory chip?
    Answer: The MT29F64G08AEEDBJ4-12:D supports a maximum data transfer rate of 166 megatransfers per second (MT/s).

  4. Question: Is this memory chip compatible with both SLC and MLC NAND flash architectures?
    Answer: No, the MT29F64G08AEEDBJ4-12:D is specifically designed for SLC (Single-Level Cell) NAND flash architecture.

  5. Question: Can this memory chip be used in industrial applications?
    Answer: Yes, the MT29F64G08AEEDBJ4-12:D is suitable for industrial applications due to its high reliability and extended temperature range.

  6. Question: Does this memory chip support hardware encryption?
    Answer: No, the MT29F64G08AEEDBJ4-12:D does not have built-in hardware encryption capabilities.

  7. Question: What is the endurance rating of this memory chip?
    Answer: The MT29F64G08AEEDBJ4-12:D has an endurance rating of up to 100,000 program/erase cycles.

  8. Question: Can this memory chip be used in automotive applications?
    Answer: Yes, the MT29F64G08AEEDBJ4-12:D is suitable for automotive applications as it meets the required specifications and standards.

  9. Question: What is the operating temperature range of this memory chip?
    Answer: The MT29F64G08AEEDBJ4-12:D can operate within a temperature range of -40°C to +85°C.

  10. Question: Is this memory chip RoHS compliant?
    Answer: Yes, the MT29F64G08AEEDBJ4-12:D is compliant with the Restriction of Hazardous Substances (RoHS) directive.