MT53D512M64D8HR-053 WT ES:B

Basic Information Overview

Category: Memory Module
Use: Data storage and retrieval
Characteristics: High capacity, fast data transfer rate
Package: Integrated circuit module
Essence: Non-volatile memory storage
Packaging/Quantity: Single unit

Specifications

• Model: MT53D512M64D8HR-053 WT ES:B
• Capacity: 512 megabytes (MB)
• Type: DDR3 SDRAM
• Speed: 1600 megahertz (MHz)
• Voltage: 1.5 volts (V)
• Form Factor: DIMM 240-pin
• Error Correction Code (ECC): No
• Operating Temperature Range: 0°C to 85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT53D512M64D8HR-053 WT ES:B memory module has a total of 240 pins arranged in a specific configuration. The pinout diagram is as follows:

Pin 1 - VSS Pin 2 - DQ0 Pin 3 - DQ1 ... Pin 238 - VDD Pin 239 - VDDSPD Pin 240 - VSS

Functional Features

• High-speed data transfer for efficient processing
• Non-volatile memory ensures data retention even when power is lost
• Low power consumption for energy efficiency
• Wide operating temperature range for versatility
• RoHS compliance for environmental friendliness

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast data transfer rate - Low power consumption - Wide operating temperature range

Disadvantages: - Limited compatibility with older systems - Relatively high cost compared to lower-capacity modules

Working Principles

The MT53D512M64D8HR-053 WT ES:B memory module utilizes DDR3 SDRAM technology to store and retrieve data. It operates by storing binary information in an array of capacitors, which can be quickly accessed and modified. The module communicates with the computer's memory controller to transfer data between the module and the processor.

Detailed Application Field Plans

The MT53D512M64D8HR-053 WT ES:B memory module is commonly used in various computing applications that require high-speed data storage and retrieval. Some specific application fields include:

1. Desktop computers
2. Laptops and notebooks
3. Workstations
4. Servers
5. Gaming systems

Detailed and Complete Alternative Models

1. MT53B256M32D2DS-053 WT ES:A

   • Capacity: 256 megabytes (MB)
   • Type: DDR2 SDRAM
   • Speed: 800 megahertz (MHz)
   • Voltage: 1.8 volts (V)
   • Form Factor: DIMM 240-pin
   • ECC: No

2. MT53E1G32D4NQ-053 WT ES:C

   • Capacity: 1 gigabyte (GB)
   • Type: DDR4 SDRAM
   • Speed: 3200 megahertz (MHz)
   • Voltage: 1.2 volts (V)
   • Form Factor: DIMM 288-pin
   • ECC: Yes

3. MT53F512M32D2DS-053 WT ES:B

   • Capacity: 512 megabytes (MB)
   • Type: DDR2 SDRAM
   • Speed: 800 megahertz (MHz)
   • Voltage: 1.8 volts (V)
   • Form Factor: SO-DIMM 200-pin
   • ECC: No

4. MT53G1G32D8NQ-053 WT ES:C

   • Capacity: 1 gigabyte (GB)
   • Type: DDR3 SDRAM
   • Speed: 1600 megahertz (MHz)
   • Voltage: 1.5 volts (V)
   • Form Factor: DIMM 240-pin
   • ECC: Yes

These alternative models offer different capacities, types, speeds, voltages, and form factors to cater to various system requirements.

Note: The above information is subject to change as new models are released.

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