MTFC64GANALAM-WT ES TR

Product Overview

Category

MTFC64GANALAM-WT ES TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer rate
• Large storage capacity
• Low power consumption
• Compact size
• Durable and reliable

Package

MTFC64GANALAM-WT ES TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to provide non-volatile memory storage with high performance and reliability.

Packaging/Quantity

MTFC64GANALAM-WT ES TR is typically packaged in trays or reels, depending on the quantity ordered. The exact packaging and quantity can vary based on customer requirements.

Specifications

• Storage Capacity: 64GB
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -25°C to 85°C
• Sequential Read Speed: Up to 850MB/s
• Sequential Write Speed: Up to 250MB/s

Detailed Pin Configuration

The pin configuration of MTFC64GANALAM-WT ES TR is as follows:

1. VCC - Power Supply
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. R/B - Ready/Busy
7. CLE - Command Latch Enable
8. ALE - Address Latch Enable
9. DQ0-DQ7 - Data Input/Output

Functional Features

• Error Correction Code (ECC) for data integrity
• Wear Leveling to distribute data evenly across memory cells
• Bad Block Management for efficient use of available storage
• Trim and Garbage Collection for optimizing performance

Advantages and Disadvantages

Advantages

• High-speed data transfer rate improves overall system performance.
• Large storage capacity allows for storing a vast amount of data.
• Low power consumption extends battery life in portable devices.
• Compact size enables integration into small form factor devices.
• Durable and reliable, ensuring data integrity and longevity.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

MTFC64GANALAM-WT ES TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When a voltage is applied, the trapped charges can be read or modified, allowing for data storage and retrieval.

Detailed Application Field Plans

MTFC64GANALAM-WT ES TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MTFC64GANALAM-WT ES TR include: - MTFC32GJDDQ-4M IT - MTFC128GJDDQ-18M IT - MTFC256GJDDQ-1M WT - MTFC512GJDDQ-1M WT

These alternative models provide different storage capacities and may have variations in speed and interface options.

In conclusion, MTFC64GANALAM-WT ES TR is a NAND flash memory product with high-speed data transfer, large storage capacity, and low power consumption. It is widely used in various electronic devices and offers advantages such as compact size and durability. However, it has limitations in terms of cost and endurance. Its working principle involves trapping electric charges in floating gate transistors. Alternative models with different specifications are available to suit specific requirements.